Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

The so-called Boltzmann tyranny defines the fundamental thermionic limit of the
subthreshold slope of a metal–oxide–semiconductor field-effect transistor (MOSFET) at 60 …

Negative capacitance in ferroelectric materials has been suggested as a solution to reduce
the power dissipation of electronics beyond fundamental limits. The discovery of …

It has been shown that a ferroelectric material integrated into the gate stack of a transistor
can create an effective negative capacitance (NC) that allows the device to overcome …

Tunnel field-effect transistors (TFETs) rely on quantum-mechanical tunnelling and, unlike
conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), require less …

The capacitor is a key element of electronic devices and is characterized by positive
capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases …

Effective negative capacitance has been postulated in ferroelectrics because there is a
hysteresis in plots of polarization-electric field. Compelling experimental evidence of …

Recently, a novel two-dimensional (2D) MoSi2N4 has been successfully synthesized and
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …

Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …