GaN integration technology, an ideal candidate for high-temperature applications: A review
In many leading industrial applications such as aerospace, military, automotive, and deep-
well drilling, extreme temperature environment is the fundamental hindrance to the use of …
well drilling, extreme temperature environment is the fundamental hindrance to the use of …
Near-junction thermal management: Thermal conduction in gallium nitride composite substrates
The thermal management challenge posed by gallium nitride (GaN) high-electron-mobility
transistor (HEMT) technology has received much attention in the past decade. The peak …
transistor (HEMT) technology has received much attention in the past decade. The peak …
Temperature-dependent characterization of AlGaN/GaN HEMTs: Thermal and source/drain resistances
R Menozzi, GA Umana-Membreno… - … on Device and …, 2008 - ieeexplore.ieee.org
This paper shows the application of simple dc techniques to the temperature-dependent
characterization of AlGaN/GaN HEMTs in terms of the following: 1) thermal resistance and 2) …
characterization of AlGaN/GaN HEMTs in terms of the following: 1) thermal resistance and 2) …
Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method
T Sadi, RW Kelsall, NJ Pilgrim - IEEE Transactions on Electron …, 2006 - ieeexplore.ieee.org
An electrothermal Monte Carlo (MC) method is applied in this paper to investigate electron
transport in submicrometer wurtzite GaN/AlGaN high-electron mobility transistors (HEMTs) …
transport in submicrometer wurtzite GaN/AlGaN high-electron mobility transistors (HEMTs) …
Improved thermal performance of AlGaN/GaN HEMTs by an optimized flip-chip design
AlGaN/GaN high electron mobility transistors (HEMT) on sapphire substrates have been
studied for their potential application in RF power applications; however, the low thermal …
studied for their potential application in RF power applications; however, the low thermal …
Accurate measurement of channel temperature for AlGaN/GaN HEMTs
This paper proposes a novel electrical method for the determination of channel temperature
in AlGaN/GaN high-electron mobility transistors. A test structure combining various device …
in AlGaN/GaN high-electron mobility transistors. A test structure combining various device …
An efficient Terahertz rectifier on the graphene/SiC materials platform
We present an efficient Schottky-diode detection scheme for Terahertz (THz) radiation,
implemented on the material system epitaxial graphene on silicon carbide (SiC). It employs …
implemented on the material system epitaxial graphene on silicon carbide (SiC). It employs …
Self-consistent electrothermal modeling of class A, AB, and B power GaN HEMTs under modulated RF excitation
This paper presents an accurate and flexible approach to the self-consistent electrothermal
modeling of III-N-based HEMTs, combining a temperature-dependent electrical compact …
modeling of III-N-based HEMTs, combining a temperature-dependent electrical compact …
A new paradigm for understanding and enhancing the critical heat flux (CHF) limit
A Fazeli, S Moghaddam - Scientific reports, 2017 - nature.com
Nearly a century of research on enhancing critical heat flux (CHF) has focused on altering
the boiling surface properties such as its nucleation site density, wettability, wickability and …
the boiling surface properties such as its nucleation site density, wettability, wickability and …
Characterization of the nonlinear thermal resistance and pulsed thermal dynamic behavior of AlGaN–GaN HEMTs on SiC
A laboratory setup, along with a set of measurement and identification procedures, have
been developed expressly for the characterization of the thermal behavior of AlGaN/GaN …
been developed expressly for the characterization of the thermal behavior of AlGaN/GaN …