Advances in the theory of semiconductors in the 1930s in addition to the purification of
germanium and silicon crystals in the 1940s enabled the point-contact junction transistor in …

Since the contact resistance characterized by a specific contact resistivity (ρ c) in the
source/drain (S/D) regions is becoming a bottleneck for further improving device …

In this brief, we present an accurate and efficient machine learning (ML) approach which
predicts variations in key electrical parameters using process variations (PVs) from …

This paper reports ultralow contact resistivities (ρ c) achieved on highly doped p-SiGe with
two low-temperature contact formation methods. One method combines precontact …

In this article, a refined ladder transmission line model (R-LTLM) test structure capable of
extracting significantly low specific contact resistivity () eliminating parasitic metal resistance …

In this letter, we investigate contacts of a low work function rare-earth metal, La, and its
silicides on n-Si. LaSi x/n--Si contacts show low Schottky barrier height (φ b) of around 0.25 …

In this paper, the impact of different Ge preamorphization implantation (PAI) conditions on
the formation of ultrathin TiSi x as well as on the specific contact resistivity (Pc) in TiSi x/n-Si …

As advanced CMOS scaling with FinFETs continues beyond the 10/7nm nodes, contact
resistance (Rc) remains a dominant component affecting device performance. The FinFET …

Very thin plasma enhanced chemical vapor deposition (PECVD) titanium (Ti) of 6±1 nm was
characterized on doped unstructured and structured Si substrate. Based on the current state …

In this paper, the Si 0.5 Ge 0.5 channel FinFET preparation on an in situ doped SiGe strain
relaxed buffer (SRB) and its electrical characteristic optimization were explored in detail …