The electronic structure of surfaces plays a key role in the properties of quantum devices.
However, surfaces are also the most challenging to simulate and engineer. Here, the …

A detailed understanding of the atomic configuration of the compound semiconductor
surface, especially after reconstruction, is very important for the device fabrication and …

Using angle-resolved photoelectron spectroscopy, we investigate the electronic structure of
InAs (001) surfaces having different stoichiometries, ie the indium rich c (8× 2)/4× 2 surface …

The structural properties of a-Al 2 O 3/In 0.5 Ga 0.5 As, a-HfO 2/In 0.5 Ga 0.5 As, and a-ZrO
2/In 0.5 Ga 0.5 As interfaces were investigated by density-functional theory (DFT) molecular …

Formation of a contaminant free, flat, electrically passive interface to a gate oxide such as a-
Al 2 O 3 is the critical step in fabricating III-V metal oxide semiconductor field effect …

The cross-sectional dimensions of nanowires set the quantization conditions for the
electronic subbands they host. These can be used as a platform to realize one-dimesional …

Using angle-resolved photoelectron spectroscopy we study band structures of two
dimensional electron gases (2DEGs) formed at surfaces of InAs (001) due to the band …

Using angle-resolved photoelectron spectroscopy (ARPES) band structures of indium-and
arsenic-terminated InAs (001) surfaces are investigated. These surfaces are highly …

The critical condition for InAs (001) surface phase transition has been studied, the surface
phase transition of InAs (001) showed discontinuity with hysteresis cycle as a function of …

The narrow-gap III-V semiconductors InAs and InSb (InX) have attractive material
parameters, including small effective mass, large Lande g-factor, and large spin-orbit …