Plasma-assisted atomic layer deposition: basics, opportunities, and challenges
HB Profijt, SE Potts, MCM Van de Sanden… - Journal of Vacuum …, 2011 - pubs.aip.org
Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the
synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one …
synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one …
Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y (iPrCp) 2 (N-iPr-amd) precursor for a high permittivity gate dielectric
We systematically investigated the effects of Y doping in HfO 2 dielectric layer, focusing on
structural phase transformation and the dielectric properties of the resultant films. Y doping …
structural phase transformation and the dielectric properties of the resultant films. Y doping …
Controlling the crystallinity of HfO2 thin film using the surface energy-driven phase stabilization and template effect
AJ Lee, BS Kim, JH Hwang, Y Kim, H Oh, YJ Park… - Applied Surface …, 2022 - Elsevier
Phase transition of HfO 2 thin film has been investigated to demonstrate desirable electrical
properties, such as high dielectric constant or ferroelectricity, however, the most of results …
properties, such as high dielectric constant or ferroelectricity, however, the most of results …
Atomic layer deposition of B 2 O 3/SiO 2 thin films and their application in an efficient diffusion doping process
We investigated atomic layer deposition (ALD) of B2O3 and SiO2 thin films using
trimethylborate (TMB) and bis-(diethylamino) silane (SAM-24) precursors, focusing on …
trimethylborate (TMB) and bis-(diethylamino) silane (SAM-24) precursors, focusing on …
Characterization of radical-enhanced atomic layer deposition process based on microwave surface wave generated plasma
D Tvarog, J Olejníček, J Kratochvíl, P Kšírová… - Journal of Applied …, 2021 - pubs.aip.org
ABSTRACT A plasma-assisted atomic layer deposition system employing a microwave
surfatron plasma was developed and characterized by spatially resolved Langmuir probe …
surfatron plasma was developed and characterized by spatially resolved Langmuir probe …
Low temperature atomic layer deposited Al-doped ZnO thin films and associated semiconducting properties
Semiconducting Al-doped ZnO films were deposited by atomic layer deposition at low
deposition temperatures of less than 100 C and used to fabricate transistors. At deposition …
deposition temperatures of less than 100 C and used to fabricate transistors. At deposition …
MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
In this paper, we report the plasma-enhanced atomic layer deposition (PEALD) of TiO2 and
TiO2/Al2O3 nanolaminate films on p-Si (100) to fabricate metal-oxide-semiconductor (MOS) …
TiO2/Al2O3 nanolaminate films on p-Si (100) to fabricate metal-oxide-semiconductor (MOS) …
Significant Enhancement of the Dielectric Constant through the Doping of CeO2 into HfO2 by Atomic Layer Deposition
WH Kim, MK Kim, IK Oh, WJ Maeng… - Journal of the …, 2014 - Wiley Online Library
Films of CeO 2 were deposited by atomic layer deposition (ALD) using a Ce (mmp) 4 [mmp=
1‐methoxy‐2‐methyl‐2‐propanolate] precursor and H2O reactant. The growth …
1‐methoxy‐2‐methyl‐2‐propanolate] precursor and H2O reactant. The growth …
Band alignment at the SiO/HfO interface: Group IIIA versus group IIIB metal dopants
Using density functional theory (DFT) we examine the effect of Al and La incorporation on
the electronic properties of the interface in the SiO 2/HfO 2 high-k gate stacks recently …
the electronic properties of the interface in the SiO 2/HfO 2 high-k gate stacks recently …
Interface engineering through atomic dopants in HfO2-based gate stacks
Controlling the effective work function ( ϕ eff) of metal electrodes is critical and
challenging in metal-oxide-semiconductor field effect transistors. The introduction of atomic …
challenging in metal-oxide-semiconductor field effect transistors. The introduction of atomic …