Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Insulated gate and surface passivation structures for GaN-based power transistors
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …
unprecedented power and frequency levels and demonstrating their capability as an able …
Native point defects and dangling bonds in α-Al2O3
We performed hybrid functional calculations of native point defects and dangling bonds
(DBs) in α-Al 2 O 3 to aid in the identification of charge-trap and fixed-charge centers in Al 2 …
(DBs) in α-Al 2 O 3 to aid in the identification of charge-trap and fixed-charge centers in Al 2 …
Electronic surface and dielectric interface states on GaN and AlGaN
GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …
devices; however, they are plagued by a high density of interface states that affect device …
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
T Hashizume, K Nishiguchi, S Kaneki, J Kuzmik… - Materials science in …, 2018 - Elsevier
In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
Ni‐doped TiO2/TiO2 homojunction photoanodes for efficient dye‐sensitized solar cells
A Atilgan, A Yildiz - International Journal of Energy Research, 2022 - Wiley Online Library
The development of novel bilayer photoanodes plays an essential role in dye‐sensitized
solar cell (DSSC) applications to fabricate efficient devices. Herein, a novel homojunction …
solar cell (DSSC) applications to fabricate efficient devices. Herein, a novel homojunction …
Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous
and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of …
and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of …
A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors
M Ťapajna, J Kuzmík - Applied Physics Letters, 2012 - pubs.aip.org
An analytical model for threshold voltage calculation for metal-oxide-semiconductor GaN
based high electron mobility transistors is proposed. This model includes polarization …
based high electron mobility transistors is proposed. This model includes polarization …
Mechanism of PEALD-grown AlN passivation for AlGaN/GaN HEMTs: Compensation of interface traps by polarization charges
The physical mechanism of passivation of AlGaN/GaN HEMTs by AlN thin film prepared with
plasma-enhanced atomic layer deposition (PEALD) is investigated by characterizing Ni …
plasma-enhanced atomic layer deposition (PEALD) is investigated by characterizing Ni …
Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors
Y Zhang, M Sun, SJ Joglekar, T Fujishima… - Applied Physics …, 2013 - pubs.aip.org
This paper demonstrates the compensation of the intrinsic positive charges in Al 2 O 3 gate
dielectric by fluorine ions in GaN metal-oxide-semiconductor high-electron-mobility …
dielectric by fluorine ions in GaN metal-oxide-semiconductor high-electron-mobility …