High-Temperature Stable FAPbBr3 Single Crystals for Sensitive X-ray and Visible Light Detection toward Space
Organolead trihalide perovskite single crystals (SCs) offer unprecedented opportunity for X-
ray and visible light detection. Nevertheless, it remains a challenge to keep simultaneous …
ray and visible light detection. Nevertheless, it remains a challenge to keep simultaneous …
Fabrication of UV photodetector based on GaN/Psi heterojunction using pulse laser deposition method: Effect of different laser wavelengths
In this study, GaN/pSi heterojunction photodetectors were fabricated via pulsed laser
deposition method (PLD). Photoelectrochemical etching method (PECE) with laser aid …
deposition method (PLD). Photoelectrochemical etching method (PECE) with laser aid …
Preparation and characterization of UV-enhanced GaN/porous Si photodetector using PLA in liquid
The photoluminescence and optoelectronics properties are very important for gallium nitride
(GaN) nanoparticles in the applications of ultraviolet and blue optoelectronic devices. In this …
(GaN) nanoparticles in the applications of ultraviolet and blue optoelectronic devices. In this …
Preparation of GaN/Porous silicon heterojunction photodetector by laser deposition technique
In this work, gallium nitride (GaN) thin film was deposited on porous silicon (PSi) substrate
via a pulsed laser deposition route with a 355 nm laser wavelength, 900 mJ of laser energy …
via a pulsed laser deposition route with a 355 nm laser wavelength, 900 mJ of laser energy …
[PDF][PDF] Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi.
Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition
method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi …
method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi …
Synthesis gallium nitride on porous silicon nano-structure for optoelectronics devices
The structure of gallium nitride (GaN) on porous silicon (psi) substrate was fabricated by
depositing high purity of 99.9% GaN on psi substrate using pulsed laser deposition method …
depositing high purity of 99.9% GaN on psi substrate using pulsed laser deposition method …
Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition
In this study, the fabrication of nanostructured GaN/porous Si by pulsed laser deposition
(PLD) was demonstrated. The porous silicon was prepared using laser-assisted …
(PLD) was demonstrated. The porous silicon was prepared using laser-assisted …
Fabrication of Al/Li2O/PSi/Si/Al heterojunction for photodetector and solar cell applications
In this study nano lithium oxide Li 2 O was prepared using simple chemical method SCM.
Structural and optical invesitgations were executed such as X-ray diffraction XRD, Scanning …
Structural and optical invesitgations were executed such as X-ray diffraction XRD, Scanning …
Synthesis and characterization of thin films of P3HT − G/MoS2 nanocomposites in photodetectors applications
NM Obaid, A Al-Nafiey… - Journal of Nanophotonics, 2023 - spiedigitallibrary.org
The nanocomposite, poly (3-hexylthiophene-2, 5-diyl)(P3HT)–graphene/molybdenum
disulfide (MoS2), was for the first time fabricated by the pulse laser ablation (PLA) method …
disulfide (MoS2), was for the first time fabricated by the pulse laser ablation (PLA) method …
Physical Investigations of GaN/Porous Silicon at Different Laser Wavelengths
RS Rashed, MA Fakhri, AA Alwahib… - International …, 2024 - ejournal.unimap.edu.my
In this study, we prepared PSi using the laser-assisted electrochemical etching method and
deposited Gallium nitride (GaN) on the PSi substrate using the pulsed laser technique at …
deposited Gallium nitride (GaN) on the PSi substrate using the pulsed laser technique at …