Method of forming an enhanced unexposed photoresist layer
JW Maes, KK Kachel, DK De Roest - US Patent 11,022,879, 2021 - Google Patents
The method relates to a method of forming an enhanced unexposed photoresist layer from
an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed …
an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed …
Method of processing a substrate and a device manufactured by the same
YH Kim, JW Choi, JJ Woo, TH Yoo - US Patent 10,734,244, 2020 - Google Patents
Provided is a substrate processing method capable of preventing over-etching of a part of a
stair-case structure due to an etching solution, when a barrier layer is selectively formed on …
stair-case structure due to an etching solution, when a barrier layer is selectively formed on …
Method for forming a semiconductor device structure comprising a gate fill metal
A method for forming a semiconductor device structure is disclosure. The method may
include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semicon …
include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semicon …
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
2020-11-07 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Method of selectively depositing a capping layer structure on a semiconductor device structure
A Kuroda, A Kobayashi, D Ishikawa - US Patent 10,910,262, 2021 - Google Patents
D142, 841 S 2,410,420 A 2,563,931 A 2,660,061 A 2,745,640 A 2,990,045 A 3,038,951 A
3,089,507 A 3,094,396 A 3,232,437 A 3,263,502 A 3,332,286 A 3,410,349 A 3,588,192 A …
3,089,507 A 3,094,396 A 3,232,437 A 3,263,502 A 3,332,286 A 3,410,349 A 3,588,192 A …
Method of forming a structure on a substrate
TJV Blanquart, SP Haukka - US Patent 10,867,788, 2020 - Google Patents
The invention relates to depositing a layer on a substrate in a reactor, by: introducing a first
precursor comprising a silicon halide in the reactor; introducing a second precursor in the …
precursor comprising a silicon halide in the reactor; introducing a second precursor in the …
Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
P Raisanen, ME Givens - US Patent 10,720,331, 2020 - Google Patents
Methods for forming a transition metal nitride film on a substrate by atomic layer deposition
and related semiconductor device structures are provided. In some embodiments, methods …
and related semiconductor device structures are provided. In some embodiments, methods …
Method for selectively depositing a metallic film on a substrate
D Longrie, DK De Roest - US Patent 10,403,504, 2019 - Google Patents
A method for selectively depositing a metallic film on a substrate comprising a first dielectric
surface and a second metallic surface is disclosed. The method may include, exposing the …
surface and a second metallic surface is disclosed. The method may include, exposing the …
Method for depositing oxide film by thermal ALD and PEALD
A Fukazawa, H Fukuda - US Patent 10,655,221, 2020 - Google Patents
A method for depositing an oxide film on a substrate by thermal ALD and PEALD, includes:
providing a substrate in a reaction chamber; depositing a first oxide film on the substrate by …
providing a substrate in a reaction chamber; depositing a first oxide film on the substrate by …
Deposition of metal borides
C Zhu, K Shrestha, S Haukka - US Patent 10,851,456, 2020 - Google Patents
A method for depositing a metal film onto a substrate is disclosed. In particular, the method
comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane …
comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane …