[PDF][PDF] Investigation of Material Surfaces Sb-SnO2 and Ag-SnO2 used as spatial gas sensors and solar cells
A Ouerdane, M Bouslama, M Ghaffour, A Abdellaoui… - researchgate.net
The assemblies of nano-Ag doped SnO2/SiO2 and Sb-doped nano-SnO2/SiO2, in which the
nano-SnO2 particles are located in the pores of mesoporous SiO2 were synthesized using …
nano-SnO2 particles are located in the pores of mesoporous SiO2 were synthesized using …
[PDF][PDF] MODELING AND SIMULATION 2014
A OUERDANE, Z HACHOUN, M BOUSLAMA… - researchgate.net
ABSTRACT The Insulator Semiconductor Oxide (ISO) SnO2, with its wide band gap of 3.6
eV, is the most commonly encountered and widely employed as spatial gas sensors …
eV, is the most commonly encountered and widely employed as spatial gas sensors …
[PDF][PDF] Ar ions beam irradiation effects on InX semiconductor surfaces.
A Ouerdane, M Bouslama, M Ghaffour, A Abdellaoui… - ISRS-18, 2014 - dspace.spbu.ru
Ion beam irradiation is an efficiency technique for phase formation and material modification
as a non-equilibrium state. At low energy (300 eV), the Ar+ ions bombardment lead to the …
as a non-equilibrium state. At low energy (300 eV), the Ar+ ions bombardment lead to the …
[引用][C] Experimental Analysis of InP and p-ZnO/InP compounds for optoelectronic applications.
A Ouerdane, M Bouslama, A Abdellaoui, M Ghaffour…