Silicon carbide (SiC) and gallium nitride metal-oxide-semiconductor field-effect transistors
(MOSFETs) are capable of processing high power at high switching frequencies with less …

Conventional insulated gate bipolar transistor (IGBT) current sensing and protection
techniques usually employ discrete sensors, such as lossy shunt resistors, and may involve …

In power converters with high switching frequency, drive losses constitute a significant
portion of the overall power losses. Resonant gate drivers can reduce drive losses, thereby …

High electron mobility transistor (HEMT) is one popular research topic in the field of power
electronic devices. Gallium Nitride (GaN) HEMT has the advantages of high slew rate and …

In this letter, a new zero-current-switching (ZCS) dual-channel push-pull isolated resonant
gate driver (DPIRGD) is proposed to drive a pair of power mosfet in one bridge leg operating …

Resonant gate driver (RGD) is a premium solution for driving power transistors in high-
frequency and high-power-density applications, with the merits of much less power loss and …

This paper presents a new gate driver concept that allows an online, open-loop adjustment
of the switching behavior of power semiconductors during operation. An inductive …

Industrial processes are still relying on high frequency converters based on vacuum tubes.
Emerging silicon carbide semiconductor devices have potential to replace vacuum tubes …

Resonant gate driver is a promising technique to save gate driver loss at high switching
frequencies to further promote the integration level of gate driver with power modules. State …

Industrial processes which use induction and dielectric heating are still relying on resonant
converters based on vacuum tubes. New emerging medium‐voltage silicon carbide (SiC) …