Unique electronic states of Eu-based compounds
Y Ōnuki, M Hedo, F Honda - journal of the physical society of japan, 2020 - journals.jps.jp
Pressure is a powerful tool for exploring novel phenomena in solid-state physics. We review
the electronic states of single-crystalline EuT2X2 (T: transition metal, X: Si or Ge) and related …
the electronic states of single-crystalline EuT2X2 (T: transition metal, X: Si or Ge) and related …
Strong electron-phonon coupling and enhanced phonon Grüneisen parameters in valence-fluctuating metal
M Ye, MJG von Westarp, SM Souliou, M Peters… - Physical Review B, 2023 - APS
We study the valence crossover and strong electron-phonon coupling of EuPd 2 Si 2 by
polarization-resolved Raman spectroscopy. The fully symmetric phonon mode shows …
polarization-resolved Raman spectroscopy. The fully symmetric phonon mode shows …
From valence fluctuations to long-range magnetic order in single crystals
EuPd 2 Si 2 is a valence-fluctuating system undergoing a temperature-induced valence
crossover at TV′≈ 160 K. We present the successful single-crystal growth using the …
crossover at TV′≈ 160 K. We present the successful single-crystal growth using the …
Clamping effect on temperature-induced valence transition in epitaxial thin films grown on MgO(001)
Bulk EuPd 2 Si 2 show a temperature-driven valence transition of europium from∼+ 2 above
200 K to∼+ 3 below 100 K, which is correlated with a shrinking by approximately 2% of the …
200 K to∼+ 3 below 100 K, which is correlated with a shrinking by approximately 2% of the …
Epitaxial thin films of binary Eu-compounds close to a valence transition
Intermetallic binary compounds of europium reveal a variety of interesting phenomena due
to the interconnection between two different magnetic and 4f electronic (valence) states …
to the interconnection between two different magnetic and 4f electronic (valence) states …
Abrupt Change in Electronic States under Pressure in New Compound EuPt3Al5
We successfully grew single crystals of a new ternary Eu-divalent compound, EuPt3Al5, with
an orthorhombic structure (Pnma,# 62) using the Bridgman method. EuPt3Al5 orders …
an orthorhombic structure (Pnma,# 62) using the Bridgman method. EuPt3Al5 orders …
Valence transition induced changes of the electronic structure in
We present the results of hard x-ray angle-resolved photoemission spectroscopy and
photoemission diffraction measurements performed on high-quality single crystals of the …
photoemission diffraction measurements performed on high-quality single crystals of the …
Hard x-ray photoemission study of the temperature-induced valence transition system
K Ichiki, K Mimura, H Anzai, T Uozumi, H Sato… - Physical Review B, 2017 - APS
We investigated the bulk-derived electronic structure of the temperature-induced valence
transition system EuNi 2 (Si 1− x Ge x) 2 (x= 0.70, 0.79, and 0.82) by means of hard x-ray …
transition system EuNi 2 (Si 1− x Ge x) 2 (x= 0.70, 0.79, and 0.82) by means of hard x-ray …
Oxidation state sensitivity of Eu L γ 4 emission and its applications to oxidation state selective EXAFS spectroscopy of EuPd 2 Si 2
H Hayashi, N Kanai, Y Takehara… - Journal of Analytical …, 2011 - pubs.rsc.org
In this paper, we have examined analytical spectrometry using Eu Lγ4. The oxidation-state-
fluctuating compound EuPd2Si2 exhibits the largest temperature-induced valence changes …
fluctuating compound EuPd2Si2 exhibits the largest temperature-induced valence changes …
Conduction-band electronic states of YbInCu studied by photoemission and soft x-ray absorption spectroscopies
Y Utsumi, H Sato, H Kurihara, H Maso, K Hiraoka… - Physical Review B …, 2011 - APS
We have studied conduction-band (CB) electronic states of a typical valence-transition
compound YbInCu 4 by means of temperature-dependent hard x-ray photoemission …
compound YbInCu 4 by means of temperature-dependent hard x-ray photoemission …