Wide-bandgap semiconductors possess much larger energy bandgaps in comparison to
traditional semiconductors such as silicon, rendering them very promising for applications in …

High-electron-mobility transistors based on gallium nitride technology are the most recently
developed power electronics devices involved in power electronics applications. This article …

The technological development of GaN high electron mobility transistor (HEMT) is on the
right track to compete with Si and SiC-based power transistors for the market segment of> …

We report on the electrical and microstructural characterization of an Au-free V/Al/Ti/TiN
ohmic contact for AlGaN/GaN heterostructures. Ultra-low contact resistance and specific …

Aluminum nitride (AlN) thin film has been considered one of the most promising candidates
for gate insulating layer of GaN-based HEMT devices. To reach the highest performance of …

This paper proposes an analytical model for a dual gate AlGaN/GaN Metal oxide
semiconductor-high-electron-mobility transistor (MOS-HEMT) biosensor for electrical …

By leveraging ubiquitous computing and the Internet of Things (IoT), smart cities gain
potential to provide a wider range of services. Different homogeneous and heterogeneous …

Direct conversion of X-ray irradiation using a semiconductor material is an emerging
technology in medical and material sciences. Existing technologies face problems, such as …

Because of the demand for high-speed and broadband networks, 5G technology has paid
much attention. On the one hand, due to the transit frequency of 5G, which is 450 MHz …

With the rapid development of the third-generation semiconductors, environmentally friendly
tribochemical mechanical polishing (TCMP) is in urgent need and has been a research hot …