GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review

J Ajayan, D Nirmal, P Mohankumar, D Kuriyan… - Microelectronics …, 2019 - Elsevier
Following the introduction of metamorphic high electron mobility transistors (MHEMTs) 30
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …

Low-noise amplifier for next-generation radio astronomy telescopes: Review of the state-of-the-art cryogenic LNAs in the most challenging applications

CC Chiong, Y Wang, KC Chang… - IEEE Microwave …, 2021 - ieeexplore.ieee.org
Radio astronomy is a subfield of astronomy that explores the universe via radio signals up to
a few terahertz. Since the first detection of radio signals from the Milky Way by Karl G. Jansky …

Pole-converging intrastage bandwidth extension technique for wideband amplifiers

G Feng, CC Boon, F Meng, X Yi, K Yang… - IEEE Journal of Solid …, 2017 - ieeexplore.ieee.org
To overcome limitations on bandwidth extension in conventional design techniques, a novel
pole-converging technique with transformer feedback for intrastage bandwidth extension is …

An 88.5–110 GHz CMOS low-noise amplifier for millimeter-wave imaging applications

G Feng, CC Boon, F Meng, X Yi… - IEEE Microwave and …, 2016 - ieeexplore.ieee.org
This letter presents a wideband millimeter-wave low-noise amplifier (LNA) in a 65 nm CMOS
technology. The amplifier adopts five-stage cascode topology with L-type input matching …

Ic and array technologies for 100-300ghz wireless

MJW Rodwell, ASH Ahmed, M Seo… - 2022 IEEE Custom …, 2022 - ieeexplore.ieee.org
100–300 GHz wireless systems can provide very high data rates per signal beam, and,
given the short wavelengths, even compact arrays can contain many elements, and hence …

A 200-GHz Power Amplifier With a Wideband Balanced Slot Power Combiner and 9.4-dBm P sat in 65-nm CMOS: Embedded Power Amplification

H Bameri, O Momeni - IEEE Journal of Solid-State Circuits, 2021 - ieeexplore.ieee.org
The effect of gain and embedding of amplifying cells (amp-cell) on the output power of
power amplifiers (PAs) at high mm-wave frequencies is studied. This is the frequency range …

3.2-mW ultra-low-power 173–207-GHz amplifier with 130-nm SiGe HBTs operating in saturation

Y Zhang, W Liang, X Jin… - IEEE Journal of Solid …, 2020 - ieeexplore.ieee.org
This article presents an ultra-low-power silicon germanium heterojunction bipolar transistor
(SiGe HBT) amplifier operating at 200 GHz. The amplifier consists of three cascaded gain …

Design and On-Wafer Characterization of -Band SiGe HBT Low-Noise Amplifiers

CT Coen, AÇ Ulusoy, P Song… - IEEE transactions on …, 2016 - ieeexplore.ieee.org
This paper presents the design and thorough on-wafer characterization of two G-band low-
noise amplifiers (LNAs) implemented using 0.13-μm silicon-germanium (SiGe) …

100-300GHz Wireless: ICs, Arrays, and Systems

MJW Rodwell, AA Farid, ASH Ahmed… - 2021 IEEE BiCMOS …, 2021 - ieeexplore.ieee.org
100–300GHz wireless systems can provide very high data rates per signal beam, and, given
the short wavelengths, even compact arrays can contain many elements, and hence can …

200 ghz low noise amplifiers in 250 nm inp hbt technology

U Soylu, ASH Ahmed, M Seo, A Farid… - 2021 16th European …, 2022 - ieeexplore.ieee.org
We report 200 GHz InP DHBT low noise amplifiers in common base (CB) and common
emitter (CE) topologies, together with a design procedure based on minimum noise …