GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review
Following the introduction of metamorphic high electron mobility transistors (MHEMTs) 30
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …
Low-noise amplifier for next-generation radio astronomy telescopes: Review of the state-of-the-art cryogenic LNAs in the most challenging applications
CC Chiong, Y Wang, KC Chang… - IEEE Microwave …, 2021 - ieeexplore.ieee.org
Radio astronomy is a subfield of astronomy that explores the universe via radio signals up to
a few terahertz. Since the first detection of radio signals from the Milky Way by Karl G. Jansky …
a few terahertz. Since the first detection of radio signals from the Milky Way by Karl G. Jansky …
Pole-converging intrastage bandwidth extension technique for wideband amplifiers
To overcome limitations on bandwidth extension in conventional design techniques, a novel
pole-converging technique with transformer feedback for intrastage bandwidth extension is …
pole-converging technique with transformer feedback for intrastage bandwidth extension is …
An 88.5–110 GHz CMOS low-noise amplifier for millimeter-wave imaging applications
This letter presents a wideband millimeter-wave low-noise amplifier (LNA) in a 65 nm CMOS
technology. The amplifier adopts five-stage cascode topology with L-type input matching …
technology. The amplifier adopts five-stage cascode topology with L-type input matching …
Ic and array technologies for 100-300ghz wireless
100–300 GHz wireless systems can provide very high data rates per signal beam, and,
given the short wavelengths, even compact arrays can contain many elements, and hence …
given the short wavelengths, even compact arrays can contain many elements, and hence …
A 200-GHz Power Amplifier With a Wideband Balanced Slot Power Combiner and 9.4-dBm P sat in 65-nm CMOS: Embedded Power Amplification
The effect of gain and embedding of amplifying cells (amp-cell) on the output power of
power amplifiers (PAs) at high mm-wave frequencies is studied. This is the frequency range …
power amplifiers (PAs) at high mm-wave frequencies is studied. This is the frequency range …
3.2-mW ultra-low-power 173–207-GHz amplifier with 130-nm SiGe HBTs operating in saturation
This article presents an ultra-low-power silicon germanium heterojunction bipolar transistor
(SiGe HBT) amplifier operating at 200 GHz. The amplifier consists of three cascaded gain …
(SiGe HBT) amplifier operating at 200 GHz. The amplifier consists of three cascaded gain …
Design and On-Wafer Characterization of -Band SiGe HBT Low-Noise Amplifiers
This paper presents the design and thorough on-wafer characterization of two G-band low-
noise amplifiers (LNAs) implemented using 0.13-μm silicon-germanium (SiGe) …
noise amplifiers (LNAs) implemented using 0.13-μm silicon-germanium (SiGe) …
100-300GHz Wireless: ICs, Arrays, and Systems
100–300GHz wireless systems can provide very high data rates per signal beam, and, given
the short wavelengths, even compact arrays can contain many elements, and hence can …
the short wavelengths, even compact arrays can contain many elements, and hence can …
200 ghz low noise amplifiers in 250 nm inp hbt technology
We report 200 GHz InP DHBT low noise amplifiers in common base (CB) and common
emitter (CE) topologies, together with a design procedure based on minimum noise …
emitter (CE) topologies, together with a design procedure based on minimum noise …