The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

The objective of this review article is to give an overview of the current state-of-the-art of
photoluminescence (PL) spectroscopy as a characterization tool in the study of …

Publisher Summary This chapter provides an overview of the basic issues involving the
materials used for high-brightness light emitting diodes (LEDs). It lays the fundamental …

Co-doped ZnO (Co x Zn 1− x O) is of potential interest for spintronics due to the prediction of
room-temperature ferromagnetism. We have grown epitaxial Co x Zn 1− x O films on Al 2 O 3 …

The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic
Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically …

We have investigated the effect of metal-organic chemical vapour deposition growth
conditions on impurity incorporation in GaN and AlGaN. Secondary ion mass spectrometry …

The controlled incorporation of carbon has been demonstrated for the metalorganic vapor
phase epitaxy of GaAs. Carbon levels between 1016 and 1019 cm− 3 can be achieved …

To obtain low-dislocation-density c-plane AlN on sapphire, we have studied the annealing of
AlN films at 1650 C. We prepared an AlN film with a thickness of 20 nm by radio-frequency …

Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive
review covering GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and …

Metal-organic chemical vapor deposition (MOCVD) can now be used routinely for the
preparation of a wide variety of groups III-V semiconductor materials. Ga-and In-based …