Emerging tellurium nanostructures: controllable synthesis and their applications
Tellurium (Te) is a rare element in trace amounts of about one part per billion, comparable to
that of platinum and ranked 75th in the abundance of the elements in the earth crust. Te …
that of platinum and ranked 75th in the abundance of the elements in the earth crust. Te …
Co-doping: an effective strategy for achieving stable p-type ZnO thin films
Z Ye, H He, L Jiang - Nano Energy, 2018 - Elsevier
ZnO is one of the most important functional materials with a wide direct band gap, large
exciton binding energy, and facile growth of high quality nanostructures, which make it very …
exciton binding energy, and facile growth of high quality nanostructures, which make it very …
Recent progress of the native defects and p-type doping of zinc oxide
K Tang, SL Gu, JD Ye, SM Zhu, R Zhang… - Chinese Physics …, 2017 - iopscience.iop.org
Zinc oxide (ZnO) is a compound semiconductor with a direct band gap and high exciton
binding energy. The unique property, ie, high efficient light emission at ultraviolet band …
binding energy. The unique property, ie, high efficient light emission at ultraviolet band …
Research progress in ZnO single-crystal: Growth, scientific understanding, and device applications
Zinc oxide, a wide band-gap semiconductor, has shown extensive potential applications in
high-efficiency semiconductor photoelectronic devices, semiconductor photocatalysis, and …
high-efficiency semiconductor photoelectronic devices, semiconductor photocatalysis, and …
[HTML][HTML] 氧化锌基材料, 异质结构及光电器件
申德振， 梅增霞， 梁会力， 杜小龙， 叶建东， 顾书林… - 发光学报, 2020 - cjl.lightpublishing.cn
Ⅱ-Ⅵ 族直接带隙化合物半导体氧化锌(ZnO) 的禁带宽度为3.37 eV, 室温下激子束缚能高达60
meV, 远高于室温热离化能(26 meV), 是制造高效率短波长探测, 发光和激光器件的理想材料 …
meV, 远高于室温热离化能(26 meV), 是制造高效率短波长探测, 发光和激光器件的理想材料 …
p-type K-doped ZnO nanorods for optoelectronic applications
Single crystalline p-type K-doped ZnO nanorods (NR) have been synthesized by convenient
and low-cost solution technique. X-ray diffraction analysis confirmed the hexagonal system …
and low-cost solution technique. X-ray diffraction analysis confirmed the hexagonal system …
Tellurium, the forgotten element: A review of the properties, processes, and biomedical applications of the bulk and nanoscale metalloid
D Medina-Cruz, W Tien-Street, A Vernet-Crua… - Racing for the Surface …, 2020 - Springer
Tellurium (Te) is a brittle, mildly toxic, and rare metalloid with an extremely low abundance in
the planet. The element has been used in both its bulk and nanoscale forms for several …
the planet. The element has been used in both its bulk and nanoscale forms for several …
A review of earth abundant ZnO-based materials for thermoelectric and photovoltaic applications
Zinc oxide (ZnO) is an earth abundant wide bandgap semiconductor of great interest in the
recent years. ZnO has many unique properties, such as non-toxic, large direct bandgap …
recent years. ZnO has many unique properties, such as non-toxic, large direct bandgap …
[HTML][HTML] Advances in growth, doping, and devices and applications of zinc oxide
Zinc oxide is a breakthrough multifunctional material of emerging interest applicable in the
areas of electronics, computing, energy harvesting, sensing, optoelectronics, and …
areas of electronics, computing, energy harvesting, sensing, optoelectronics, and …
Investigation on the p-type formation mechanism of nitrogen ion implanted ZnO thin films induced by rapid thermal annealing
Z Huang, H Ruan, H Zhang, D Shi, W Li… - Optical Materials …, 2019 - opg.optica.org
N-doped p-type zinc oxide (ZnO) thin films were prepared by rapid thermal annealing (RTA)
of nitrogen ion implanted high quality ZnO epitaxial layers. Annealing at 900° C in a nitrogen …
of nitrogen ion implanted high quality ZnO epitaxial layers. Annealing at 900° C in a nitrogen …