Nanosheet (NS) and nanowire (NW) FET architectures scaled to a gate length (LG) of 16 nm
and below are benchmarked against equivalent FinFETs. The device performance is …

The VLSI industry has grown a lot for several decades. The Packing density of integrated
circuits has been increased without compromising the functionality. Scaling of …

Abstract Nanosheet Field Effect Transistor (NSFET) is a viable contender for future scaling in
sub-7-nm technology. This paper provides insights into the variations of DC FOMs for …

In this paper, DC and analog/RF figures of merit (FOMs) for different geometrical variations
of the Gate all around (GAA) Nanosheet FET (NSFET) are computationally examined. For …

In this study, for the very first time developing of n-and p-type 3-D single-channel (SC)
FinFET and gate-all-around (GAA) Multi-Bridge-Channel FETs (MBCFET) like nanowire FET …

Abstract The Nanosheet Field Effect Transistor (NSFET) has been shown to be a viable
candidate for sub-7-nm technology nodes. This paper assesses and compares the NSFET …

A novel and feasible trench inner-spacer (TIS) scheme to eliminate undesired parasitic
bottom transistors (trpbt) in gate-all-around (GAA) nanosheet (NS) field-effect transistors …

In this paper, we are proposing a gate oxide stack source halo symmetric and asymmetric
underlap extension nanowire MOSFET with HfO2 spacer at 10 nm regime. The increased …

This manuscript demonstrates the performance comparison of vertically stacked nanosheet
FET with various high-k materials in gate stack (GS) configuration. As the high-k dielectric …

In this paper, for the first time, the performance of 3D Nanosheet FETs (NSFETs) is reported
in the inversion (INV), accumulation (ACC), and junctionless (JL) modes at elevated …