Amorphous oxide semiconductors have drawn considerable attention as a replacement for
ubiquitous silicon based technologies. By virtue of their flexible substrate compatibility and …

Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the
publication of more than 1,300 related papers. Although the number of researches on oxide …

A fast and flexible all-organic electrochromic device, fabricated using polythiophene and
PCBM as active materials and plastic substrate, which shows very good power efficiency as …

Electrochromic performance of an inorganic–organic layered blend consisting of prussian
blue and ethyl viologen has been studied in the form of a device designed to test its …

In this study, the oxygen scavenger layer (OSL) is proposed as a back channel in the bilayer
channel to enhance both the electrical characteristics and stability of an amorphous indium …

High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using
hydrogenated IGZO (IGZO: H) at a maximum process temperature of 150° C. IGZO: H was …

We propose the introduction of a magnesium oxide (MgO x) layer to reduce the temperature
required for the activation of indium gallium zinc oxide (IGZO) thin films. By incorporating the …

Despite recent improvements in oxide-based thin-film transistors (TFTs), their performance
(ie, mobility and on/off ratio) must be further enhanced and the fabrication temperature must …

Abstract In–Ga–Zn–O (IGZO) films were deposited by sputtering in Ar+ O 2+ H 2 and Ar+ H 2
O atmosphere to investigate the effects of H 2 and H 2 O introduction on physical and …

Abstract In-Ga-Sn-O (IGTO) thin-film transistors (TFTs) were fabricated with Al 2 O 3 gate
insulators by plasma-enhanced atomic layer deposition (PEALD) at a temperature of 150° C …