The generalization from empirically determined screened pseudopotentials to self-
consistently screened ab initio pseudopotentials had led to widespread use of the method in …

3.3. 1. Elemental source conventional molecular beam epitaxy 3.3. 2. Metalorganic vapor
phase epitaxy (MO VPE) 3.3. 3. Gas-source molecular beam epitaxy 3.3. 4. Modulated beam …

The hydrostatic pressure dependence of the binding energies for donors in GaAs-Al x Ga 1-
x As quantum well heterostructures is reported. It is found that the binding energy of the …

Alloying is a widely employed approach for tuning properties of materials, especially for
thermal conductivity which plays a key role in the working liability of electronic devices and …

A systematic study of the conduction bands of the (001) GaAs/Al x Ga 1− x As and Al x Ga 1−
x As/AlAs superlattices using a one-band Wannier orbital model is presented. The …

The effective-mass approximation is extended so as to take into account mixings between Γ
and X conduction-band valleys at heterointerfaces consisting of Al x Ga 1− x As with different …

This study presents a detailed theoretical analysis of the effects of hydrostatic pressure,
temperature, impurity factors, and external electric fields on the optical properties of In x Ga 1 …

The binding energies of donors in quantum wells are investigated with a variational method
considering the influence of finite barriers under hydrostatic pressure. In the calculation, we …

The boundary conditions for the envelope functions at semiconductor heterointerfaces are
calculated. They are obtained in a form of a 2× 2 interface matrix, which gives two linear …

The subband structure of (GaAs) N/(AlAs) M along the growth direction [001] through the
center of the Brillouin zone and through the zone-boundary point at (100) is calculated using …