Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …
been extensively investigated as potential replacements for current polar c-plane LEDs …
Review of advanced techniques for multi‐gigabit visible light communication
Visible light communication (VLC) is a promising candidate for future indoor wireless
communication. Light emitting diodes (LEDs) are popular choices as transmitters for VLC …
communication. Light emitting diodes (LEDs) are popular choices as transmitters for VLC …
A Comparative Study on the Electrical Properties of Vertical ( ) and (010) -Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates
This paper reports a comprehensive study on the anisotropic electrical properties of vertical
(2̅01) and (010) β-Ga 2 O 3 Schottky barrier diodes (SBDs). The devices were fabricated …
(2̅01) and (010) β-Ga 2 O 3 Schottky barrier diodes (SBDs). The devices were fabricated …
[HTML][HTML] Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers
This letter reports the implementation of double-drift-layer (DDL) design into GaN vertical
Schottky barrier diodes (SBDs) grown on free-standing GaN substrates. This design …
Schottky barrier diodes (SBDs) grown on free-standing GaN substrates. This design …
Demonstration of AlN Schottky barrier diodes with blocking voltage over 1 kV
This letter reports the first demonstration of 1-kV-class AlN Schottky barrier diodes on
sapphire substrates by metal organic chemical vapor deposition. The device structure …
sapphire substrates by metal organic chemical vapor deposition. The device structure …
Effect of buffer layer design on vertical GaN-on-GaN pn and Schottky power diodes
We study verticalGaN pn and Schottky power diodes with different buffer layer thicknesses
grown on free-standingGaN substrates, using metalorganic chemical vapor deposition. High …
grown on free-standingGaN substrates, using metalorganic chemical vapor deposition. High …
Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron-and hole-blocking layers
In this paper, we perform a comprehensive study on energy band engineering of InGaN
multi-quantum-well (MQW) solar cells using AlGaN electron-and hole-blocking layers …
multi-quantum-well (MQW) solar cells using AlGaN electron-and hole-blocking layers …
Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK
Visible light communication (VLC) holds the promise of a high-speed wireless network for
indoor applications and competes with 5G radio frequency (RF) system. Although the …
indoor applications and competes with 5G radio frequency (RF) system. Although the …
Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency
We demonstrate the nonpolar and semipolar InGaN/GaN multiple-quantum-well (MQW)
solar cells grown on the nonpolar m-plane and semipolar (20 2 1) plane bulk GaN …
solar cells grown on the nonpolar m-plane and semipolar (20 2 1) plane bulk GaN …
Enhanced quantum efficiency of horizontally aligned individual InGaN/GaN nanorod LEDs by self-assembled Ag nanoparticles
Integration of metal nanoparticles (NPs) in proximity to the InGaN/GaN-based individual
nanorod light-emitting diodes (nano-LEDs) can provide a platform to improve the emission …
nanorod light-emitting diodes (nano-LEDs) can provide a platform to improve the emission …