Ultrawide bandgap (UWBG) semiconductors, including Ga2O3, diamond, Al x Ga1–x N/AlN,
featuring bandgaps greater than 4.4 eV, hold significant promise for solar-blind ultraviolet …

Ga 2 O 3-based heterojunction photodetectors integrate Ga 2 O 3 with partner
semiconductors via deposition techniques to obtain a high-quality interface, resulting in …

High‐work function transparent electrodes (HWFTEs) are key for establishing Schottky and
Ohmic contacts with n‐type and p‐type semiconductors, respectively. However, the …

Self-powered ultraviolet photodetectors with bipolar photoresponse have great potential in
the fields of ultraviolet optical communication, all-optical controlled artificial synapses, high …

Low-dimensional Ga2O3 demonstrates a unique ultraviolet photoresponse and could be
used in various electronic and optical systems. However, the low-dimensional Ga2O3 …

Ultrawide bandgap semiconductors such as AlGaN, AlN, diamond, and β-Ga2O3 have
significantly enhanced the functionality of electronic and optoelectronic devices, particularly …

Abstract Gallium oxide (Ga 2 O 3), with its ultra-wide bandgap (∼ 4.8 eV) and high
theoretical breakdown field (8 MV/cm), holds significant research value and promising …

The ultrawide bandgap semiconductor β-Ga2O3 has huge potential for the design of deep-
ultraviolet (UV) photodetectors and nanoscale high-power electronic applications. The …

Ga2O3 Schottky photodiodes are being actively explored for solar-blind ultraviolet (SBUV)
detection, owing to the fast photoresponse and easy fabrication. However, their …

To meet the demand for the future applications of the functional layers of inverted flexible
perovskite solar cells, strain engineering of high performance formamidiniu based …