Unprecedented enhancement of piezoelectricity in wurtzite nitride semiconductors via thermal annealing
The incorporation of rare-earth elements in wurtzite nitride semiconductors, eg, scandium
alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses …
alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses …
Effects of high-temperature thermal annealing on the crystal structure and phase separation in sputtered ScAlN thin films
Doping scandium in aluminum nitride (AlN) can effectively enhance the piezoelectric
properties of the material, herein making ScAlN a research hotspot for the application of high …
properties of the material, herein making ScAlN a research hotspot for the application of high …
Ferroelectric‐Controllable Optoelectronic Performance in 2D‐Metallic SnSe/Sc0.25Al0.75N Heterostructure
Scandium‐doped aluminium nitride (ScxAl1‐xN) has made extensive progress in its
applicationfor non‐volatile ferroelectric field effect transistors (FeFETs). However, ScAlN …
applicationfor non‐volatile ferroelectric field effect transistors (FeFETs). However, ScAlN …
Interface structures of Al0. 85Sc0. 15N-on-Si thin films grown by reactive magnetron sputtering upon post-growth cyclic rapid thermal annealing
ABSTRACT Al0. 85Sc0. 15N thin films, about 920nm thick, have been deposited on the Si
(001) substrate by reactive magnetron sputtering at 600 C. X-ray diffraction and pole-figure …
(001) substrate by reactive magnetron sputtering at 600 C. X-ray diffraction and pole-figure …
Design and Fabrication of 3.5 GHz Band-Pass Film Bulk Acoustic Resonator Filter
With the development of wireless communication, increasing signal processing presents
higher requirements for radio frequency (RF) systems. Piezoelectric acoustic filters, as …
higher requirements for radio frequency (RF) systems. Piezoelectric acoustic filters, as …