Negative gate transconductance in gate/source overlapped heterojunction tunnel FET and application to single transistor phase encoder
AR Trivedi, KZ Ahmed… - IEEE Electron Device …, 2015 - ieeexplore.ieee.org
Negative gate transconductance (NGT) is shown in gate/source overlapped heterojunction
tunnel FET (SO-HTFET). At higher VGS, depletion region in the gate overlapped source …
tunnel FET (SO-HTFET). At higher VGS, depletion region in the gate overlapped source …
Thoughts on possible future charge-based technologies for nano-electronics
A Marshall - IEEE Transactions on Circuits and Systems I …, 2014 - ieeexplore.ieee.org
Scaling of silicon-based devices cannot continue indefinitely. As a result, various groups
have been working on replacements for conventional CMOS. The most close to production …
have been working on replacements for conventional CMOS. The most close to production …
Accurate modelling of graphene field effect transistor for wireless communications
J Tian, A Katsounaros, D Smith… - 2016 10th European …, 2016 - ieeexplore.ieee.org
This article presents a DC model for graphene field effect transistor with improved accuracy
for wireless communications. The model takes into account the mobility difference between …
for wireless communications. The model takes into account the mobility difference between …