The electronic band structure of highly mismatched alloys (HMAs) was very successfully
explored using electromodulation (EM) spectroscopy, ie, photoreflectance (PR) …

The surface potential barrier is an important issue for design and development of
semiconductors devices, particularly based on heterostructures. It can be investigated with …

Recently, high-resistive GaN has been studied for lateral power devices. Fe-doped GaN has
high resistivity at room temperature. However, the resistivity becomes lower at high …

Crystal defect engineering is widely used as an effective approach to regulate the optical
and optoelectronic properties of semiconductor nanostructures. However, photogenerated …

The potential use of combined e−-γ vs γ-γ Perturbed Angular Correlations (PAC)
experiments as a possible alternative to study electronic properties of materials and/or …

The surface electric field (F) of β-FeSi 2 has been investigated by Franz–Keldysh oscillations
(FKOs) observed in photoreflectance spectra. The FKO signals were observed in an …

Zinc is often regarded as an alternative to magnesium p-type dopants in gallium nitride.
However, besides many theoretical predictions, at present, there are poor data on …

Abstract Ultra-wide-bandgap (UWBG) materials-based power electronic devices suffer from
unexpected and uncertain locations of non-uniformity, and high fields degrade these …

The eXciton Franz–Keldysh (XFK) effect is observed in GaN p–n junction diodes via the
spectral variation of photocurrent responsivity data that redshift and broaden with increasing …

As already introduced in Chapter 2, Perturbed Angular Correlations (PAC) is a nuclear
hyperfine technique that has been widely used in the last decades to study a multitude of …