Variability in resistive memories

JB Roldán, E Miranda, D Maldonado… - Advanced Intelligent …, 2023 - Wiley Online Library
Resistive memories are outstanding electron devices that have displayed a large potential in
a plethora of applications such as nonvolatile data storage, neuromorphic computing …

Stimuli‐responsive memristive materials for artificial synapses and neuromorphic computing

H Bian, YY Goh, Y Liu, H Ling, L Xie… - Advanced Materials, 2021 - Wiley Online Library
Neuromorphic computing holds promise for building next‐generation intelligent systems in a
more energy‐efficient way than the conventional von Neumann computing architecture …

[HTML][HTML] Brain-inspired computing with memristors: Challenges in devices, circuits, and systems

Y Zhang, Z Wang, J Zhu, Y Yang, M Rao… - Applied Physics …, 2020 - pubs.aip.org
This article provides a review of current development and challenges in brain-inspired
computing with memristors. We review the mechanisms of various memristive devices that …

Variability-aware modeling of filamentary oxide-based bipolar resistive switching cells using SPICE level compact models

C Bengel, A Siemon, F Cüppers… - … on Circuits and …, 2020 - ieeexplore.ieee.org
Bipolar resistive switching (BRS) cells based on the valence change mechanism show great
potential to enable the design of future non-volatile memory, logic and neuromorphic circuits …

Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T–4R structure for high-density memory

M Xie, Y Jia, C Nie, Z Liu, A Tang, S Fan… - Nature …, 2023 - nature.com
Emerging data-intensive computation has driven the advanced packaging and vertical
stacking of integrated circuits, for minimized latency and energy consumption. Yet a …

On the thermal models for resistive random access memory circuit simulation

JB Roldán, G González-Cordero, R Picos, E Miranda… - Nanomaterials, 2021 - mdpi.com
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …

A collective study on modeling and simulation of resistive random access memory

D Panda, PP Sahu, TY Tseng - Nanoscale research letters, 2018 - Springer
In this work, we provide a comprehensive discussion on the various models proposed for the
design and description of resistive random access memory (RRAM), being a nascent …

Low‐power computing with neuromorphic engineering

D Liu, H Yu, Y Chai - Advanced Intelligent Systems, 2021 - Wiley Online Library
The increasing power consumption in the existing computation architecture presents grand
challenges for the performance and reliability of very‐large‐scale integrated circuits …

Structural and parametric identification of knowm memristors

V Ostrovskii, P Fedoseev, Y Bobrova, D Butusov - Nanomaterials, 2021 - mdpi.com
This paper proposes a novel identification method for memristive devices using Knowm
memristors as an example. The suggested identification method is presented as a …

A data-driven verilog-a reram model

I Messaris, A Serb, S Stathopoulos… - … on Computer-Aided …, 2018 - ieeexplore.ieee.org
The translation of emerging application concepts that exploit resistive random access
memory (ReRAM) into large-scale practical systems requires realistic yet computationally …