Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …

In this review paper, several new approaches about the 3C-SiC growth are been presented.
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …

Monolithic integration of optoelectronics with electronics is a much-desired functionality.
Here, we demonstrate that it is possible to realize low-loss Ge quantum-well photonic …

Semiconductor-based freestanding membranes (FSM) have recently emerged as a highly
promising area of advanced materials research. Their unique properties, such as lightweight …

DOI: 10.1002/adma. 201505865 sub-layer atoms seems necessary to complete the
transition, the energy barrier for the vertical atomic motion of Ge dominates the switching …

The integration of Ge on Si for photonics applications has reached a high level of maturity:
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …

Combination of mismatched materials in semiconductor nanowire heterostructures offers a
freedom of bandstructure engineering that is impossible in standard planar epitaxy …

Using molecular beam epitaxy, self-assembled AlGaN nanowires are grown directly on Ta
and Ti foils. Scanning electron microscopy shows that the nanowires are locally textured …

The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …

Several crystalline structures are metastable or kinetically frozen out-of-equilibrium states in
the phase space. When the corresponding lifetime is sufficiently long, typical equilibrium …