We study the electroluminescence (EL) emission of purely n-doped resonant tunneling
diodes in a wide temperature range. The paper demonstrates that the EL originates from …

We investigate the electron resonance transmission through a symmetric double-barrier
structure with the Dresselhaus spin-orbit coupling and an oscillating field applied to the …

We report electric-field-induced modulation of the spin splitting during the charging and
discharging processes of ap-type GaAs∕ AlAs double-barrier resonant-tunneling diode …

We have investigated the polarized-resolved photoluminescence from the contact layers
and the quantum-well in an n-type GaAs/GaAlAs resonant tunneling diode for magnetic …

In this paper, we develop an analytical model for the resonant current-voltage (I–V)
characteristics of 2D-2D Resonant Tunneling Diodes. Starting from the Tsu-Esaki formalism …

We have investigated the polarized emission from a n-type Ga As∕ Al Ga As resonant
tunneling diode under magnetic field. The GaAs contact layer emission shows a large …

The authors investigate the circular polarization of the electro-and photoluminescence
emissions from the quantum well and contact layers of a nonmagnetic GaAs–AlAs pin …

This paper presents a fully analytical model for the current-voltage (I–V) characteristics of
Resonant Tunneling Diodes. Based on Tsu-Esaki formalism, we consider the full electrical …

The authors have observed a strong dependence of the circular polarization degree from the
quantum well emission in an asymmetric n-type Ga As∕ Al As∕ Al Ga As resonant …

The transport of electrons through a GaAs/AlAs double-barrier structure with p-type doped
contacts was investigated using time-resolved photoluminescence spectroscopy. Under …