Graphene‐Enhanced Single Ion Detectors for Deterministic Near‐Surface Dopant Implantation in Diamond

NFL Collins, AM Jakob, SG Robson… - Advanced Functional …, 2023 - Wiley Online Library
Diamond color centers with applications to single photon sources, quantum computation,
and magnetic field sensing down to the nanoscale have been investigated using ensembles …

Semiconductor characterization by scanning ion beam induced charge (IBIC) microscopy

E Vittone - International Scholarly Research Notices, 2013 - Wiley Online Library
The ion beam induced charge (IBIC) technique is a scanning microscopy technique which
uses finely focused MeV ion beams as probes to measure and image the transport …

Deep level defects in 4H-SiC introduced by ion implantation: The role of single ion regime

Ž Pastuović, R Siegele, I Capan, T Brodar… - Journal of Physics …, 2017 - iopscience.iop.org
We characterized intrinsic deep level defects created in ion collision cascades which were
produced by patterned implantation of single accelerated 2.0 MeV He and 600 keV H ions …

4H-SiC Schottky diode radiation hardness assessment by IBIC microscopy

E Vittone, P Olivero, M Jakšic̈, Ž Pastuović - Nuclear Instruments and …, 2023 - Elsevier
We report findings on the Ion Beam Induced Charge (IBIC) characterization of a 4H-SiC
Schottky barrier diode (SBD), in terms of the modification of the Charge Collection Efficiency …

Near-surface electrical characterization of silicon electronic devices using focused keV-range ions

SG Robson, P Räcke, AM Jakob, N Collins… - Physical Review …, 2022 - APS
The demonstration of universal quantum logic operations near the fault-tolerance threshold
has established ion-implanted near-surface donor atoms as a plausible platform for scalable …

Characterization of the charge collection efficiency in silicon 3-D-detectors for microdosimetry

D Bachiller-Perea, JG López… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
New silicon 3-D-microdetectors have been developed to perform microdosimetry
measurements for applications in hadron therapy. In this work, the charge collection …

Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

E Vittone, Z Pastuovic, MBH Breese, JG Lopez… - Nuclear Instruments and …, 2016 - Elsevier
This paper investigates both theoretically and experimentally the charge collection efficiency
(CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge …

[HTML][HTML] Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

JBS Abraham, BA Aguirre, JL Pacheco… - Applied Physics …, 2016 - pubs.aip.org
We demonstrate low energy single ion detection using a co-planar detector fabricated on a
diamond substrate and characterized by ion beam induced charge collection. Histograms …

[HTML][HTML] A multi-electrode two-dimensional position sensitive diamond detector

S Ditalia Tchernij, D Siciliano, G Provatas… - Applied Physics …, 2024 - pubs.aip.org
In multi-electrode devices, charge pulses at all the electrodes are induced concurrently by
the motion of the excess charge carriers generated by a single ion. This charge-sharing …

IBIC microscopy–The powerful tool for testing micron–Sized sensitive volumes in segmented radiation detectors used in synchrotron microbeam radiation and hadron …

Z Pastuovic, J Davis, TL Tran, JR Paino… - Nuclear Instruments and …, 2019 - Elsevier
Abstract Ion Beam Induced Charge (IBIC) microscopy performed using highly tuned
microbeams of accelerated ions with energies in the MeV range is the powerful tool for …