It is now firmly established that various adsorptive and catalytic processes taking place on
the surface of semiconductors and in MIS structures strongly influence their electronic …

The diffusion rates of carbon and oxygen in two calcite crystals of different Mn contents have
been studied between 500° and 800° C in a CO 2-H 2 O atmosphere (P CO 2= 1− 5 bars …

The incorporation of Sn as a dopant in GaAs has been studied in the temperature range of
500°–650° C, over a wide range of Ga and As fluxes, the latter being incident as either As 4 …

Modern analytical methods for the investigation of surfaces have been greatly improved
during the last decade, and the number of instruments offered by manufacturers has …

Recently, there has been a rapid increase in the application of multilayered structured
materials, as opposed to bulk materials, in many areas of technological development …

This paper is a review of various methods for interface analysis and how they are or could
be used for studying the stability of interfaces in solar energy materials. First, a brief …

The rapid solidification of silicon layers melted by high-power laser pulses lead to an
enhanced incorporation of implanted dopants in substitutional lattice sites. A review of …

The crystalline structure, surface morphology, optical properties and purity of ZnTe layers
grown by MOVPE were investigated. Various substrates, different combinations of …

Based on a review of recent domestic and international literature, examples of using
secondary ion mass spectrometry (SIMS) for the determination of carbon and hydrogen in …

In secondary ion mass spectroscopy (SIMS), an energetic beam of focused ions is directed
at the sample surface in a high or ultrahigh vacuum (UHV) environment. The transfer of …