Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

This review focuses on the emerging field of core–multishell (CMS) semiconductor
nanowires (NWs). In these kinds of wires, a NW grown vertically on a substrate acts as a …

The realisation of photonic devices for different energy ranges demands materials with
different bandgaps, sometimes even within the same device. The optimal solution in terms of …

Metal halide perovskites have shown excellent properties for lighting applications, including
high photoluminescence quantum yield (PLQY), compositional tunability, and narrow …

Monolithically integrated III–V semiconductors on a silicon-on-insulator (SOI) platform can
be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III–V …

Vertical GaN nanowires are grown in a self-induced way on a sputtered Ti film by plasma-
assisted molecular beam epitaxy. Both in situ electron diffraction and ex situ ellipsometry …

We report the effects of Si doping on the growth dynamics and size distribution of entirely
catalyst-free GaAs nanowire (NW) arrays grown by selective area molecular beam epitaxy …

Selective area epitaxy is a promising approach to define nanowire networks for topological
quantum computing. However, it is challenging to concurrently engineer nanowire …

Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light
sources with strong potential for applications in optical communication and sensing …

This paper proposed a highly sensitive Double Metal Gate-stacking Cylindrical Nanowire-
MOSFET (DMG CL-NWMOSFET) photosensor by using In 1− x Ga x As. For the best control …