Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
Recent studies of SiGeSn materials and optoelectronic devices hold great promise for
photonics integrated circuits (PICs) on Si platform featuring scalable, cost-effective, and …
photonics integrated circuits (PICs) on Si platform featuring scalable, cost-effective, and …
Compositional dependence of the direct and indirect band gaps in Ge1− ySny alloys from room temperature photoluminescence: implications for the indirect to direct …
The compositional dependence of the lowest direct and indirect band gaps in Ge 1− y Sn y
alloys has been determined from room-temperature photoluminescence measurements …
alloys has been determined from room-temperature photoluminescence measurements …
Progress on germanium–tin nanoscale alloys
Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
Critical thickness for strain relaxation of Ge1− xSnx (x≤ 0.17) grown by molecular beam epitaxy on Ge (001)
We investigated the critical thickness (hc) for plastic relaxation of Ge 1− x Sn x grown by
molecular beam epitaxy. Ge 1− x Sn x films with various Sn mole fraction x (x≤ 0.17) and …
molecular beam epitaxy. Ge 1− x Sn x films with various Sn mole fraction x (x≤ 0.17) and …
Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform
HS Mączko, R Kudrawiec, M Gladysiewicz - Scientific Reports, 2016 - nature.com
It is shown that compressively strained Ge1− xSnx/Ge quantum wells (QWs) grown on a Ge
substrate with 0.1≤ x≤ 0.2 and width of 8 nm≤ d≤ 14 nm are a very promising gain …
substrate with 0.1≤ x≤ 0.2 and width of 8 nm≤ d≤ 14 nm are a very promising gain …
Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs
L Peng, X Li, J Zheng, X Liu, M Li, Z Liu, C Xue… - Journal of …, 2020 - Elsevier
Abstract Two Ge 1-x Sn x/Si 0.1 Ge 0.85 Sn 0.05 (x= 7.3% and 8.5%) multi-quantum wells
(MQWs) based light emitting diodes (LEDs) were designed and fabricated to achieve …
(MQWs) based light emitting diodes (LEDs) were designed and fabricated to achieve …
Advances in light emission from group-IV alloys via lattice engineering and n-type doping based on custom-designed chemistries
Intrinsic and n-type Ge1–y Sn y alloys with y= 0.003–0.11 have been grown on Ge-buffered
Si via reactions of Ge3H8 and SnD4 hydrides using UHV-CVD techniques. The films exhibit …
Si via reactions of Ge3H8 and SnD4 hydrides using UHV-CVD techniques. The films exhibit …
Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing
H Cai, K Qian, Y An, G Lin, S Wu, H Ding… - Journal of Alloys and …, 2022 - Elsevier
The behavior of strain relaxation and Sn segregation of GeSn epilayers during growth and
thermal annealing is very complex depending on the growth method, thickness and Sn …
thermal annealing is very complex depending on the growth method, thickness and Sn …
Growth and characterization of SiGeSn quantum well photodiodes
IA Fischer, T Wendav, L Augel, S Jitpakdeebodin… - Optics …, 2015 - opg.optica.org
We report on the fabrication and electro-optical characterization of SiGeSn multi-quantum
well PIN diodes. Two types of PIN diodes, in which two and four quantum wells with well and …
well PIN diodes. Two types of PIN diodes, in which two and four quantum wells with well and …