A continuous exponential rise has been observed in the storage and processing of the data
that may not curtail in the foreseeable future. The required data processing speed and …

Copper indium thiophosphate, CuInP 2 S 6, has attracted much attention in recent years due
to its van der Waals layered structure and robust ferroelectricity at room temperature. In this …

Ferroelectric HfO2-based materials hold great potential for the widespread integration of
ferroelectricity into modern electronics due to their compatibility with existing Si technology …

The recent discovery of ferroelectricity in thin hafnium oxide films has led to a resurgence of
interest in ferroelectric memory devices. Although both experimental and theoretical studies …

Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-
destructive electrical read-out of the polarization states in ferroelectric memories. Still, the …

Poly (vinylidene fluoride)(PVDF) and its copolymers are key polymers, displaying properties
such as flexibility and electroactive responses, including piezoelectricity, pyroelectricity, and …

Ferroelectrics and multiferroics have recently emerged as perspective materials for
information technology and data storage applications. The combination of extremely narrow …

Interfacial 'dead'layers between metals and ferroelectric thin films generally induce
detrimental effects in nanocapacitors, yet their peculiar properties can prove advantageous …

Ferroelectricity in fluorite-structured ferroelectrics such as HfO 2 and ZrO 2 has been
attracting increasing interest since its first publication in 2011. Fluorite-structured …

The motion of domain walls is critical to many applications involving ferroelectric materials,
such as fast high-density non-volatile random access memory. In memories of this sort …