Abstract Ultrafast UV photodetectors (UV PDs) are crucial components in modern
optoelectronics because conventional detectors have reached a bottleneck with low …

Optical detection is of great significance in various fields such as industry, military, and
medical treatment, especially ultraviolet (UV) photodetectors. Moreover, as the demand for …

Graphene monolayer has been extensively applied as a transparency electrode material in
photoelectronic devices due to its high transmittance, high carrier mobility, and ultrafast …

ZnO/SnO 2 core-shell nanorod arrays (CSNAs) were synthesized by a facile preparation
method. Compared with bare ZnO nanorod arrays (NAs), the near-band-edge …

SnO2 has been extensively applied in the fields of optoelectronic devices because of its
large band gap, high exciton binding energy, and outstanding optical/electrical properties …

Low-dimensional, lead-free, and cuprous-based halide compounds of Cs3Cu2Br5 micro-
rods and CsCuBr2 micro-crosses (MCs) were synthesized via a simple solution method. The …

Vertical SnO2 based p‐n junctions are pivotal since they built the core components in
photoelectronic systems. Nevertheless, preparation of high‐quality p‐SnO2 with controllable …

The large bandgap SnO 2 exhibits outstanding ultraviolet light absorption and excellent
semiconductor properties, thus making it a promising candidate to developing photodiodes …

Abstract Nanocrystalline highly Fe-doped SnO 2 thin films were prepared using a new
simple sol-gel method with iron amounts of 5, 10, 15 and 20%. The obtained gel offers a …

Low-dimensional ZnO micro/nanocrystals having high optical gain, self-constructed
microcavity and large-bandgap, is the largest potential constituent for constructing droop …