Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

J Wu, S Chen, A Seeds, H Liu - Journal of Physics D: Applied …, 2015 - iopscience.iop.org
Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

Quantum-dot semiconductor optical amplifiers

T Akiyama, M Sugawara, Y Arakawa - Proceedings of the IEEE, 2007 - ieeexplore.ieee.org
This paper reviews the recent progress of quantum-dot semiconductor optical amplifiers
developed as ultrawideband polarization-insensitive high-power amplifiers, high-speed …

Engineering InAsxP1-x/InP/ZnSe III−V Alloyed Core/Shell Quantum Dots for the Near-Infrared

SW Kim, JP Zimmer, S Ohnishi, JB Tracy… - Journal of the …, 2005 - ACS Publications
Quantum dots with a core/shell/shell structure consisting of an alloyed core of InAs x P1-x,
an intermediate shell of InP, and an outer shell of ZnSe were developed. The InAs x P1-x …

Telecom-wavelength (1.5 μm) single-photon emission from InP-based quantum dots

M Benyoucef, M Yacob, JP Reithmaier, J Kettler… - Applied Physics …, 2013 - pubs.aip.org
We demonstrate pronounced single-photon emission from InAs/AlGaInAs/InP quantum dots
(QDs) at wavelengths above 1.5 μm that are compatible with standard long-distance fiber …

Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s− 1 directly modulated lasers and 40 …

M Sugawara, N Hatori, M Ishida, H Ebe… - Journal of Physics D …, 2005 - iopscience.iop.org
This paper presents recent progress in the field of semiconductor lasers and optical
amplifiers with InAs-based self-assembled quantum dots in the active region for optical …

Universal growth scheme for quantum dots with low fine-structure splitting at various emission wavelengths

J Skiba-Szymanska, RM Stevenson, C Varnava… - Physical Review …, 2017 - APS
Efficient sources of individual pairs of entangled photons are required for quantum networks
to operate using fiber-optic infrastructure. Entangled light can be generated by quantum dots …

Spin waves in a one-dimensional spinor Bose gas

JN Fuchs, DM Gangardt, T Keilmann, GV Shlyapnikov - Physical review letters, 2005 - APS
We study a one-dimensional (iso) spin 1/2 Bose gas with repulsive δ-function interaction by
the Bethe Ansatz method and discuss the excitations above the polarized ground state. In …

[PDF][PDF] Self-organization of colloidal nanoparticles

J Dutta, H Hofmann - Encyclopedia of nanoscience and …, 2004 - researchgate.net
The emerging fields of nanoscience and nanoengineering are leading to unprecedented
understanding and control over the fundamental building blocks of all physical matter …

Effects of As/P exchange reaction on the formation of InAs/InP quantum dots

S Yoon, Y Moon, TW Lee, E Yoon, YD Kim - Applied physics letters, 1999 - pubs.aip.org
InAs self-assembled quantum dots (SAQDs) were grown on InP at various temperatures and
V/III ratios by metalorganic chemical vapor deposition. The density, size distribution, and …

Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties

P Holewa, S Kadkhodazadeh, M Gawełczyk… - …, 2022 - degruyter.com
The rapidly developing quantum communication technology requires deterministic quantum
emitters that can generate single photons and entangled photon pairs in the third telecom …