Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …

An efficient way to reduce the power consumption of electronic devices is to lower the supply
voltage, but this voltage is restricted by the thermionic limit of subthreshold swing (SS), 60 …

The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …

Transistor concepts based on semiconductor nanowires promise high performance, lower
energy consumption and better integrability in various platforms in nanoscale dimensions …

Nanowires are natural one-dimensional channels and offer new opportunities for advanced
electronic quantum transport experiments. We review recent progress on the synthesis of …

High-electron-mobility group III–V compounds have been regarded as a promising
successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide …

Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …

Advances in conventional inorganic photoactive materials, such as silicon and III–V
compound semiconductors, enabled the development of high-performance and energy …

Uniform, defect‐free crystal interfaces and surfaces are crucial ingredients for realizing high‐
performance nanoscale devices. A pertinent example is that advances in gate‐tunable and …