Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
Review of highly mismatched III-V heteroepitaxy growth on (001) silicon
Y Du, B Xu, G Wang, Y Miao, B Li, Z Kong, Y Dong… - Nanomaterials, 2022 - mdpi.com
Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …
Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches
An efficient way to reduce the power consumption of electronic devices is to lower the supply
voltage, but this voltage is restricted by the thermionic limit of subthreshold swing (SS), 60 …
voltage, but this voltage is restricted by the thermionic limit of subthreshold swing (SS), 60 …
How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches
B Kunert, Y Mols, M Baryshniskova… - Semiconductor …, 2018 - iopscience.iop.org
The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …
of new device applications and functionalities which would benefit from both the excellent …
High electron mobility in strained GaAs nanowires
Transistor concepts based on semiconductor nanowires promise high performance, lower
energy consumption and better integrability in various platforms in nanoscale dimensions …
energy consumption and better integrability in various platforms in nanoscale dimensions …
Electronic Transport and Quantum Phenomena in Nanowires
G Badawy, EPAM Bakkers - Chemical Reviews, 2024 - ACS Publications
Nanowires are natural one-dimensional channels and offer new opportunities for advanced
electronic quantum transport experiments. We review recent progress on the synthesis of …
electronic quantum transport experiments. We review recent progress on the synthesis of …
Performance limit of ultrathin GaAs transistors
High-electron-mobility group III–V compounds have been regarded as a promising
successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide …
successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide …
Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors
Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …
Photoactive materials and devices for energy-efficient soft wearable optoelectronic systems
Advances in conventional inorganic photoactive materials, such as silicon and III–V
compound semiconductors, enabled the development of high-performance and energy …
compound semiconductors, enabled the development of high-performance and energy …
Shadow epitaxy for in situ growth of generic semiconductor/superconductor hybrids
Uniform, defect‐free crystal interfaces and surfaces are crucial ingredients for realizing high‐
performance nanoscale devices. A pertinent example is that advances in gate‐tunable and …
performance nanoscale devices. A pertinent example is that advances in gate‐tunable and …