Enhanced ultraviolet GaN photo-detector response on Si (111) via engineered oxide buffers with embedded Y2O3/Si distributed Bragg reflectors
Based on a virtual GaN substrate approach on Si (111) by a step graded double oxide (Sc 2
O 3/Y 2 O 3) buffer, we report a “proof of principle” study on the enhanced photo-response of …
O 3/Y 2 O 3) buffer, we report a “proof of principle” study on the enhanced photo-response of …
Electro-absorption modulator
G Yu, AJ Zilkie - US Patent 10,838,240, 2020 - Google Patents
An optoelectronic device comprising: a silicon-on-insulator (SOI) substrate, the substrate
comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support …
comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support …
Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing …
A Szyszka, L Lupina, G Lupina, MA Schubert… - Journal of Applied …, 2014 - pubs.aip.org
Based on a novel double step oxide buffer heterostructure approach for GaN integration on
Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN …
Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN …
Study of thermal stability of distributed Bragg reflectors based on epitaxial rare-earth oxide and silicon heterostructures
R Dargis, J Leathersich, A Clark, E Arkun - Journal of Vacuum Science …, 2014 - pubs.aip.org
Thermal stability of rare-earth oxide/silicon multilayer heterostructure-based distributed
Bragg reflectors under typical metal organic chemical vapor deposition process …
Bragg reflectors under typical metal organic chemical vapor deposition process …
FET transistor on a III-V material structure with substrate transfer
R Chu - US Patent 10,263,104, 2019 - Google Patents
(57) ABSTRACT A method of manufacturing a III-V semiconductor circuit; the method
comprising: forming a first layer of a III-V material on a growth substrate; forming a second …
comprising: forming a first layer of a III-V material on a growth substrate; forming a second …
Optical modulator and method of fabricating an optical modulator using rare earth oxide
Y Zhang, AJ Zilkie - US Patent 11,428,962, 2022 - Google Patents
A MOS capacitor-type optical modulator and method of fabricating a MOS capacitor-type
optical modulator, wherein the MOS capacitor-type optical modulator has a MOS capacitor …
optical modulator, wherein the MOS capacitor-type optical modulator has a MOS capacitor …
FET transistor on a III-V material structure with substrate transfer
R Chu - US Patent 10,916,647, 2021 - Google Patents
(57) ABSTRACT A method of manufacturing a III-V semiconductor circuit; the method
comprising: forming a first layer of a III-V material on a growth substrate; forming a second …
comprising: forming a first layer of a III-V material on a growth substrate; forming a second …
Other Epitaxial Oxides on Semiconductors
AA Demkov, AB Posadas, AA Demkov… - Integration of Functional …, 2014 - Springer
The success of integrating perovskites on Si (001) has also stimulated work on developing
growth processes for other oxide materials, other crystallographic orientations, and even …
growth processes for other oxide materials, other crystallographic orientations, and even …