Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films
In this work, a systematic photoluminescence (PL) study on three series of gallium
oxide/aluminum gallium oxide films and bulk single crystals is performed including …
oxide/aluminum gallium oxide films and bulk single crystals is performed including …
Review of Radiation-Induced Effects on β-Ga2O3 Materials and Devices
β-Ga2O3 has become an ultimate choice of emerging new-generation material for its wide
range of compelling applications in power electronics. In this review, we have explored the …
range of compelling applications in power electronics. In this review, we have explored the …
Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing
Vertical metal–oxide–semiconductor field effect transistor (MOSFET) is essential to the future
application of ultrawide bandgap β-Ga 2 O 3. In this work, we demonstrated an …
application of ultrawide bandgap β-Ga 2 O 3. In this work, we demonstrated an …
Ion implantation in β-Ga2O3: Physics and technology
A Nikolskaya, E Okulich, D Korolev… - Journal of Vacuum …, 2021 - pubs.aip.org
Gallium oxide, and in particular its thermodynamically stable β-Ga 2 O 3 phase, is within the
most exciting materials in research and technology nowadays due to its unique properties …
most exciting materials in research and technology nowadays due to its unique properties …
Atomic-scale smoothing of semiconducting oxides via plasma-enabled atomic-scale reconstruction
Abstract β-Ga 2 O 3, known as a next-generation wide-bandgap transparent semiconducting
oxide (TSO), has considerable application potential in ultra-high-power and high …
oxide (TSO), has considerable application potential in ultra-high-power and high …
Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β-Ga2O3 power diodes
Beta phase gallium oxide (β-Ga 2 O 3) is emerging as a promising material for space
applications due to its unique properties and potential high performance in extreme …
applications due to its unique properties and potential high performance in extreme …
Structural and optical properties of pulsed-laser deposited crystalline β-Ga2O3 thin films on silicon
Crystalline β-Ga 2 O 3 thin films on (100)-and (111)-oriented Si substrates are produced by
pulsed laser deposition. The as-deposited thin films are demonstrated to be polycrystalline …
pulsed laser deposition. The as-deposited thin films are demonstrated to be polycrystalline …
Unraveling optical degradation mechanism of β-Ga2O3 by Si4+ irradiation: A combined experimental and first-principles study
Wide bandgap β-Ga 2 O 3 is an ideal candidate material with broad application prospects
for power electronic components in the future. Aiming at the application requirements of β …
for power electronic components in the future. Aiming at the application requirements of β …
Observation of Anomalous Negative Photoconductivity in Ga2O3 Nanowires: Implications for Broadening the Spectral Response of Photodetectors
W Ruan, X Meng - ACS Applied Nano Materials, 2023 - ACS Publications
Ga2O3 nanowires on silicon substrates were synthesized by the chemical vapor deposition
method, and the Ga2O3-based metal–semiconductor–metal structured solar-blind …
method, and the Ga2O3-based metal–semiconductor–metal structured solar-blind …
The effect of oxygen annealing on characteristics of β-Ga2O3 solar-blind photodetectors on SiC substrate by ion-cutting process
In this work, a high quality (2 ̅ 01) β-Ga 2 O 3 single-crystalline film was transferred to the
4H-SiC substrate by ion-cutting technique, on which the metal-semiconductor-metal (MSM) …
4H-SiC substrate by ion-cutting technique, on which the metal-semiconductor-metal (MSM) …