Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high
power and high frequency applications, with higher breakdown voltages and two …

Radiation hardening of power MOSFETs (metal oxide semiconductor field effect transistors)
is of the highest priority for sustaining high-power systems in the space radiation …

Heavy-ion data suggest that a common mechanism is responsible for single-event burnout
(SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly …

Simulations are used to characterize the single event transient current and voltage
waveforms in deep submicron CMOS integrated circuits. Results indicate that the …

In this article, a method of single-event burnout (SEB) hardening at high linear energy
transfer (LET) value range is proposed and investigated by the 2-D numerical simulations …

This article presents the 2-D numerical simulation results of the heavy-ion-induced leakage
current degradation and single-event burnout (SEB) in the rated 1.2-kV silicon-carbide (SiC) …

In this article, the performance and triggering mechanism of the single-event burnout (SEB)
of a 4H-SiC trench-gate (TG) MOSFET structure are evaluated by the 2-D numerical …

High-voltage pin diodes for space applications are sensitive to single event burnout (SEB),
which may cause the failure of the entire electronic system. This article describes the SEB …

Terrestrial cosmic radiation is a significant factor for the reliability of power electronic
devices, for voltage classes that range from about 300 V to beyond 6500 V. As such, cosmic …

Experiments and simulation studies on 283 MeV I ion induced single event effects of silicon
carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) were carried …