Droplet epitaxy for advanced optoelectronic materials and devices

J Wu, ZM Wang - Journal of Physics D: Applied Physics, 2014 - iopscience.iop.org
Droplet epitaxy was proposed to fabricate quantum dots in the early 1990s. Even though
many research efforts have been devoted to droplet epitaxy since then, it is only until …

Fabrication of multiple concentric nanoring structures

C Somaschini, S Bietti, N Koguchi, S Sanguinetti - Nano letters, 2009 - ACS Publications
We present the fabrication of GaAs/AlGaAs Multiple (from three to five) concentric nanoring
structures by an innovative growth method based on droplet epitaxy and characterized by …

Kinetic model of local droplet etching

C Heyn - Physical Review B—Condensed Matter and Materials …, 2011 - APS
The self-organized in situ drilling of nanoholes into semiconductor surfaces by using liquid
metallic droplets during conventional molecular beam epitaxy represents a new degree of …

Nanohole etching in AlGaSb with gallium droplets

J Hilska, A Chellu, T Hakkarainen - Crystal Growth & Design, 2021 - ACS Publications
We demonstrate nanohole formation in AlGaSb by Ga droplet etching within a temperature
range from 270 to 500° C, allowing a wide range of tunability of the nanohole density. By …

[HTML][HTML] Highly uniform GaSb quantum dots with indirect–direct bandgap crossover at telecom range

A Chellu, J Hilska, JP Penttinen, T Hakkarainen - APL Materials, 2021 - pubs.aip.org
We demonstrate a new quantum-confined semiconductor material based on GaSb quantum
dots (QDs) embedded in a single-crystalline AlGaSb matrix by filling droplet-etched …

Droplet epitaxy of nanostructures

S Sanguinetti, S Bietti, N Koguchi - Molecular Beam Epitaxy, 2018 - Elsevier
The droplet epitaxy is an innovative growth method, performed in the molecular beam
epitaxy environment, for the fabrication of quantum nanostructures with highly designable …

Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots

C Heyn, A Gräfenstein, G Pirard, L Ranasinghe… - Nanomaterials, 2022 - mdpi.com
Strain-free GaAs quantum dots (QDs) are fabricated by filling droplet-etched nanoholes in
AlGaAs. Using a template of nominally identical nanoholes, the QD size is precisely …

Advanced technologies for quantum photonic devices based on epitaxial quantum dots

TM Zhao, Y Chen, Y Yu, Q Li… - Advanced quantum …, 2020 - Wiley Online Library
Quantum photonic devices are candidates for realizing practical quantum computers and
networks. The development of integrated quantum photonic devices can greatly benefit from …

Fundamental role of arsenic flux in nanohole formation by Ga droplet etching on GaAs (001)

D Fuster, Y González, L González - Nanoscale research letters, 2014 - Springer
Nanoholes with a depth in the range of tens of nanometers can be formed on GaAs (001)
surfaces at a temperature of 500° C by local etching after Ga droplet formation. In this work …

Scaling of the structural characteristics of nanoholes created by local droplet etching

C Heyn, S Schnüll, W Hansen - Journal of Applied Physics, 2014 - pubs.aip.org
We study the tuneability of nanoholes created by local droplet etching of AlGaAs surfaces
with Al droplets at varied coverage θ of the deposited droplet material and process …