One approach to extend the acoustic applications of aluminum nitride (AlN) in the GHz
frequency range is to take advantage of the piezoelectric performance and high acoustic …

Structural and optical properties of AlN films grown on c-sapphire by metalorganic chemical
vapor deposition (MOCVD) with varied thicknesses (0.4-10 µm) are investigated. AlN with …

The non-polar a-plane AlGaN epitaxial layer with an Al composition as high as 0.69 and
enhanced structural and optical properties was successfully grown by metal-organic …

AlN thin films were deposited on c-, a-and r-plane sapphire substrates by the magnetron
sputtering technique. The influence of high-temperature thermal annealing (HTTA) on the …

This study addresses the difficulty of obtaining high crystalline quality non-polar a-plane AlN
films grown epitaxially on r-plane sapphire substrates by applying a high-temperature …

Preparing high quality non-polar aluminum nitride (AlN) templates is the key to improving
the performance of non-polar deep-ultraviolet light-emitting diodes. In this study, we …

In the present work, a single-crystalline epitaxial nonpolar a-plane AlN film with in-plane two-
folder symmetries was successfully achieved on an r-plane sapphire substrate, by …

A-plane aluminum nitride (AlN) with high quality is crucial to fabricate high-performance non-
polar deep-ultraviolet optoelectronic devices. In this work, we prepared crystalline a-plane …

Face-to-face annealed and sputter-deposited aluminum nitride (FFA Sp-AlN) has potential in
deep-ultraviolet light-emitting devices. Herein, the effects of the substrate off-cut angle (θ …

The high-quality aluminum nitride (AlN) epilayer is the key factor that directly affects the
performance of semiconductor deep-ultraviolet (DUV) photoelectronic devices. In this work …