Abstract Two-dimensional (2D) ferromagnetic materials with unique magnetic properties
have great potential for next-generation spintronic devices with high flexibility, easy …

In the current information age, the realization of memory devices with energy efficient
design, high storage density, nonvolatility, fast access, and low cost is still a great challenge …

As CMOS technology begins to face significant scaling challenges, considerable research
efforts are being directed to investigate alternative device technologies that can serve as a …

Spin-transfer torque magnetic memory (STT-MRAM) has gained significant research interest
due to its nonvolatility and zero standby leakage, near unlimited endurance, excellent …

Spintronics is a growing research field that focuses on exploring materials and devices that
take advantage of the electron's “spin” to go beyond charge based devices. The most …

Recent studies have shown that material structures, which lack structural inversion symmetry
and have high spin-orbit coupling can exhibit chiral magnetic textures and skyrmions which …

This letter presents a spin-orbit torque magnetic random access memory (SOT-MRAM) for
high-density, reliable, and energy-efficient on-chip memory application. Unlike the …

We show that the spin-orbit torque induced magnetization switching in nanomagnets
presenting Dzyaloshinskii-Moriya (DMI) interaction is governed by a chiral domain …

Spin–orbit torque induced ferromagnetic magnetization switching brought by injecting a
charge current into strong spin–orbit-coupling materials is an energy-efficient writing method …

Field-free magnetization switching via the interplay of spin orbit torque (SOT), exchange bias
field (⁠ HEX⁠), and voltage controlled magnetic anisotropy (VCMA) is crucial for the …