Rapid progress in β-gallium oxide (β-Ga 2 O 3) material and device technologies has been
made in this decade, and its superior material properties based on the very large bandgap …

Over the last decade, beta-phase gallium oxide (β-Ga2O3) has developed an extensive
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …

Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …

β-Ga 2 O 3 based solar-blind photodetectors have strong radiation hardness and great
potential applications in Earth's space environment due to the large bandgap and high bond …

Abstract Beta-Gallium oxide (β-Ga 2 O 3) has emerged as a very feasible semiconductor
material for new explorations, thanks to its advantages of ultra-wide bandgap and diverse …

Ultraviolet‐C (UVC) radiation is employed in various applications, including irreplaceable
applications in military and civil fields, such as missile guidance, flame detection, partial …

Pure and∼ 7.5 at% Zn alloyed β-Ga2O3 epitaxial films were epitaxially grown by metal
organic chemical vapor deposition choosing sapphire (c-plane) as substrates, followed by …

The integration of graphene with semiconductor materials has been studied for developing
advanced electronic and optoelectronic devices. Here, we propose ultrahigh …

A low temperature controlled annealing technique was utilized to improve the performance
of vertical β-gallium oxide (β-Ga 2 O 3) Schottky barrier diodes (SBDs) in this work. The …

Abstract Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and
solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and …