A Perspective View of Silicon Based Classical to Non-Classical MOS Transistors and their Extension in Machine Learning
Unprecedented growth in CMOS technology and demand of high-density integrated circuits
(ICs) in semiconductor industry has motivated to research community towards the …
(ICs) in semiconductor industry has motivated to research community towards the …
A proof of concept for reliability aware analysis of junctionless negative capacitance FinFET-based hydrogen sensor
This work demonstrates the reliability-aware analysis of the Junctionless negative
capacitance (NC) FinFET employed as a hydrogen (H 2) gas sensor. Gate stacking of the …
capacitance (NC) FinFET employed as a hydrogen (H 2) gas sensor. Gate stacking of the …
Analysis of thermal stability in underlap and overlap DMG FinFETs including self-heating effects
This work investigates the impact of the self-heating effect (SHE) on SOI Dual-Material Gate
(DMG) FinFETs with channel engineering including gate underlapped and overlapped …
(DMG) FinFETs with channel engineering including gate underlapped and overlapped …
Core-shell architecture and channel suppression: unleashing the potential of SC_RCS_DGJLFET
A Himral, R Sharma, M Agarwal - Physica Scripta, 2024 - iopscience.iop.org
In this investigation, a suppressed channel-rectangular core–shell double gate junctionless
field effect transistor (SC_RCS_DGJLFET) is simulated to enhance the junctionless device's …
field effect transistor (SC_RCS_DGJLFET) is simulated to enhance the junctionless device's …
Investigation of geometrical impact on a P+ buried negative capacitance SOI FET
In this paper, we proposed a novel p+ buried negative capacitance (NC) silicon-on-insulator
(SOI) FET and investigated the impact of various device parameter variations on device …
(SOI) FET and investigated the impact of various device parameter variations on device …
Device Design Aware and Interface Thermal Resistance Assisted Self-Heating Analysis in Nanosheet FET
S Rathore, SK Banchhor, RK Jaisawal… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
The nanoscaled geometrical confinement of the Nanosheet FET (NSHFET) has severely
aggravated the self-heating effect, affecting the device's characteristics, such as lattice …
aggravated the self-heating effect, affecting the device's characteristics, such as lattice …
Role of Interfacial Oxide on Capacitance Matching in a Negative Capacitance FinFET: A Reliability Perspective
Capacitance matching is a prime requirement to realize a Negative Capacitance (NC) FET.
The ferroelectric (FE) layer in the gate stack with an interfacial oxide (IO) put forward two …
The ferroelectric (FE) layer in the gate stack with an interfacial oxide (IO) put forward two …