The growth and characterization of functional oxide thin films that are ferroelectric, magnetic,
or both at the same time are reviewed. The evolution of synthesis techniques and how …

Two-dimensional electron gases (2DEGs) at oxide interfaces may exhibit unique properties,
including effects from strong electron correlations, extremely high electron densities …

The epitaxial growth of functional oxides using a substrate with a graphene layer is a highly
desirable method for improving structural quality and obtaining freestanding epitaxial …

Much progress has been made in the area of wide bandgap semiconductors for applications
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …

Driven by an ever‐expanding interest in new material systems with new functionality, the
growth of atomic‐scale electronic materials by molecular beam epitaxy (MBE) has evolved …

Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing
semiconductor heterostructures with high purity, high mobility, and exquisite control of layer …

Many complex oxides with only nonvolatile constituents do not have a wide growth window
in conventional molecular beam epitaxy (MBE) approaches, which makes it difficult to obtain …

The in situ epitaxial growth of Bi-Sr-Ca-Cu-O films by molecular beam epitaxy (MBE) is
reported. The suitability of various oxidants for the MBE growth of cuprate superconductors …

Combining the power and possibilities of heterostructure engineering with the collective and
emergent properties of quantum materials, quantum-matter heterostructures open a new …

Growth mechanism and temperature of monoclinic gallium oxide (β‐Ga2O3) films grown by
ozone molecular beam epitaxy (MBE) are investigated herein. Phase‐pure (2¯ 01) β …