In this paper, we review the radiation damage issues caused by displacement damage in
silicon sensors operating in the harsh radiation environments of high energy physics …

Abstract A Phase-II Upgrade is proposed for the LHCb experiment in order to take full
advantage of the flavourphysics opportunities at the HL-LHC, and other topics that can be …

New sensor technologies are under development to cope with the ever increasing
requirements for high energy physics (HEP) detectors. For the High-Luminosity LHC (HL …

Active silicon detectors built on p-type substrate are a promising technological solution for
large area silicon trackers such as those at the High Luminosity LHC, but the radiation …

This study focuses on the properties of the B i O i (interstitial Boron–interstitial Oxygen) and
C i O i (interstitial Carbon–interstitial Oxygen) defect complexes by 5.5 MeV electrons in low …

Charge collection properties of depleted CMOS pixel detector prototypes produced on p-
type substrate of 2 kΩ cm initial resistivity (by LFoundry 150 nm process) were studied using …

Silicon detectors based on the HV-CMOS technology are being investigated as possible
candidate for the outer layers of the ATLAS pixel detector for the High Luminosity LHC. In …

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS
experiment at the LHC, as well as for other future tracking applications in which large areas …

In this work, the thermally stimulated current (TSC) technique has been used to investigate
the properties of the radiation-induced interstitial boron and interstitial oxygen defect …

Position sensitive silicon detectors are more resilient to radiation then predicted from
extensive measurements over the R&D phase for Large Hadron Collider. It was …