Size effect on negative capacitance at forward bias in InGaN/GaN multiple quantum well-based blue LED
Abstract Size effect of InGaN/GaN multiple quantum well (MQW) blue light emitting diodes
(LEDs), on electrical characteristics in forward bias voltage at high injection current in light …
(LEDs), on electrical characteristics in forward bias voltage at high injection current in light …
Forward-capacitance measurement on wide-bandgap light-emitting diodes
DP Han, YJ Kim, JI Shim… - IEEE Photonics …, 2016 - ieeexplore.ieee.org
Capacitance-voltage characteristics of a GaN-based light-emitting diode under high forward
bias is investigated. We examine the validity of measurement results from different …
bias is investigated. We examine the validity of measurement results from different …
“U-turn” feature in the efficiency-versus-current curve of GaInN/GaN light-emitting diodes
The onset of the efficiency droop in GaInN/GaN blue light-emitting diodes (LEDs), ie, the
maximum-efficiency point, typically occurs at current densities of 1–10 A/cm 2 and the …
maximum-efficiency point, typically occurs at current densities of 1–10 A/cm 2 and the …
Dc and ac electrical response of MOCVD grown GaN in pin structure, assessed through I–V and admittance measurement
NA Kuruoğlu, O Özdemir, K Bozkurt… - Journal of Physics D …, 2017 - iopscience.iop.org
The electrical response of gallium nitride (GaN), produced through metal–organic chemical
vapor deposition in a pin structure was investigated through temperature-dependent current …
vapor deposition in a pin structure was investigated through temperature-dependent current …
New view on the variation of forward conduction mechanisms derived from electrical stress in UV-A light emitting diodes
The electrical stress induced variation of forward conduction mechanism in ultraviolet light
emitting diodes in UV-A spectral range is usually attributed to the increase of trap density …
emitting diodes in UV-A spectral range is usually attributed to the increase of trap density …
[图书][B] Design, growth, and characterization of III-Sb and III-N materials for photovoltaic applications
E Vadiee - 2019 - search.proquest.com
Photovoltaic (PV) energy has shown tremendous improvements in the past few decades
showing great promises for future sustainable energy sources. Among all PV energy …
showing great promises for future sustainable energy sources. Among all PV energy …
Distinct U-shape efficiency-versus-current curves in AlGaN-based deep-ultraviolet light-emitting diodes
The efficiency of an AlGaN deep-ultraviolet light-emitting diode with peak emission
wavelength of 285 nm is investigated as a function of current over a wide range of …
wavelength of 285 nm is investigated as a function of current over a wide range of …
Transport and storage dynamics of 30% In-rich InGaN/GaN MQW LED p–i–n structure
O Özdemir, K Bozkurt, NA Kuruoğlu… - Journal of Physics D …, 2019 - iopscience.iop.org
DC and AC electrical characteristics of an InGaN/GaN multi-quantum well light emitting
diode based on PIN structures were investigated through temperature-dependent current …
diode based on PIN structures were investigated through temperature-dependent current …
MOCVD ile büyütülen GaN pin yapısındaki sarı ışık merkezinin elektro-optik ölçümlerle incelenmesi
NA Kuruoğlu - Journal of the Institute of Science and Technology, 2022 - dergipark.org.tr
Bu çalışmada, metal organik buhar fazlı epitaksi ile üretilmiş GaN pin yapı,
elektrolüminesans (EL) ve sıcaklığa akım-gerilim ölçümleriyle incelenmiştir. GaN pin …
elektrolüminesans (EL) ve sıcaklığa akım-gerilim ölçümleriyle incelenmiştir. GaN pin …
MOCVD ile büyütülen GaN pin yapısındaki sarı ışık merkezinin elektro-optik ölçümlerle incelenmesi.
N AYARCI KURUOĞLU - Journal of the Institute of Science & …, 2022 - search.ebscohost.com
Bu çalışmada, metal organik buhar fazlı epitaksi ile üretilmiş GaN pin yapı,
elektrolüminesans (EL) ve sıcaklığa akım-gerilim ölçümleriyle incelenmiştir. GaN pin …
elektrolüminesans (EL) ve sıcaklığa akım-gerilim ölçümleriyle incelenmiştir. GaN pin …