This paper first describes the quantitative determination of the static and dynamic properties
of the locally stable states of monatomic hydrogen dissolved in crystalline silicon: H+, H 0 …

β-Ga 2 O 3 is an ultrawide bandgap semiconductor that is attracting much attention for
applications in next-generation high-power, deep UV, and extreme-environment devices …

Abstract β-Ga 2 O 3 is a transparent conducting oxide with a wide bandgap (4.9 eV) whose
properties are generating widespread interest. It has been found that hydrogen can play a …

Available data on hydrogen in silicon samples quenched from a high T and in those
exposed to a plasma at low T are analyzed and the existence of three different forms of …

Infrared spectra obtained from Czochralski (CZ) silicon heated in the range 1100<~ T<~
1300 C in H 2, D 2, or mixtures of the two gases, show vibrational absorption at 1075 cm− 1 …

First-principles local-density formalism cluster theory is used to determine the structure of Au-
and Ag-hydrogen complexes in Si. The theory, with an empirical correction, is then applied …

Boron-doped, float zone silicon has been hydrogenated at C and then quenched to room
temperature. Infrared absorption measurements of the samples in their as-quenched state …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

As-grown Czochralski silicon samples with different oxygen concentrations have been
heated at temperatures in the range 350-500 “C. Oxygen loss during anneals at low …

Abstract Boron-doped silicon ((B) approximately 10 17 cm-3) was heated in H 2 gas at a
temperature in the range 900< or= T< or= 1300 degrees C and quenched to room …