Silicon photonics defines a significant advancement in the development of highly integrated
devices on a single semiconductor substrate. As a revolutionizing technology it benefits from …

Photoluminescence spectroscopy and atom probe tomography were used to explore the
optical activity and microstructure of Er 3+-doped Si-rich SiO 2 thin films fabricated by radio …

We have fabricated a series of thin (~ 50 nm) erbium-doped (by ion implantation) silicon-rich
oxide films in the configuration that mitigates previously proposed mechanisms for loss of …

A combined experimental and theoretical study on the electroluminescent excitation
mechanism for trivalent erbium (Er 3+) ions in a silicon-rich nitride (SiN x) host is presented …

Silicon nanowires (Si NWs) emerged in several application fields as a strategic element to
surpass the bulk limits with a flat compatible architecture. The approaches used for the Si …

This study reports on the investigation and characterization of the different emitting centers
within SiO 2 codoped by Er 3+ ions and silicon-excess. Erbium doped silicon-rich silicon …

In this paper, we report on the luminescence-center (LC)-mediated excitation of Er 3+ as a
function of annealing temperature in Er-doped Si-rich SiO 2 (SRO) films fabricated by …

We investigate the structural evolution of Er/Si nanoclusters obtained in co-implanted fused
silica upon annealing via Raman spectroscopy and transmission electron microscopy. The …

Imaging the spatial distribution of silicon nanocrystals (Si‐NCs) and erbium ion clusters can
assist in the development of light‐emitting erbium‐doped silicon nanocomposites. We …

Many disparate methods of compositional analysis of materials are underpinned by the
same fundamental atomic processes: the excitation of the electronic system of the atoms …