The rise of AI optoelectronic sensors: From nanomaterial synthesis, device design to practical application
We have seen the significant influence of the information revolution brought about by
optoelectronic sensing technologies on human civilization over the last few decades …
optoelectronic sensing technologies on human civilization over the last few decades …
A state-of-art review on gallium oxide field-effect transistors
As a promising ultra-wide bandgap (UWBG) semiconductor, gallium oxide (Ga 2 O 3) has
recently aroused increasing attention in the area for high-power electronics, power switch for …
recently aroused increasing attention in the area for high-power electronics, power switch for …
[HTML][HTML] Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX
This Letter reports a high performance β-Ga 2 O 3 thin channel MOSFET with T gate and
degenerately doped (n++) source/drain contacts regrown by metal organic chemical vapor …
degenerately doped (n++) source/drain contacts regrown by metal organic chemical vapor …
[HTML][HTML] Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method
Z Galazka, S Ganschow, P Seyidov, K Irmscher… - Applied Physics …, 2022 - pubs.aip.org
Two inch diameter, highly conducting (Si-doped) bulk β-Ga 2 O 3 single crystals with the
cylinder length up to one inch were grown by the Czochralski method. The obtained crystals …
cylinder length up to one inch were grown by the Czochralski method. The obtained crystals …
[HTML][HTML] Ultrawide bandgap semiconductors
Ultrawide bandgap (UWBG) semiconductors, with energy bandgaps (> 4 eV), much wider
than the conventional wide bandgap (WBG) of GaN (3.4 eV) and SiC (3.2 eV), represent an …
than the conventional wide bandgap (WBG) of GaN (3.4 eV) and SiC (3.2 eV), represent an …
Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency
This letter reports-(Al x Ga 1-x) 2 O 3/Ga 2 O 3 (AlGaO/GaO) heterostructure FETs (HFETs)
with significant improvement of peak transconductance (gm), current and power gain cutoff …
with significant improvement of peak transconductance (gm), current and power gain cutoff …
[HTML][HTML] A perspective on β-Ga2O3 micro/nanoelectromechanical systems
Beta gallium oxide (β-Ga 2 O 3) is an emerging ultrawide bandgap (∼ 4.8 eV)
semiconductor with attractive properties for future power and radio frequency (RF) …
semiconductor with attractive properties for future power and radio frequency (RF) …
A review of ultrawide bandgap materials: properties, synthesis and devices
Ultrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …
Heterointegrated Ga2O3-on-SiC RF MOSFETs With f T/f max of 47/51 GHz by Ion-Cutting Process
X Yu, W Xu, Y Wang, B Qiao, R Shen… - IEEE Electron …, 2023 - ieeexplore.ieee.org
Heterointegrated Ga2O3-on-SiC radio-frequency (RF) MOSFETs with record-high frequency
performances were reported. A two-dimensional electron gas like channel with a high …
performances were reported. A two-dimensional electron gas like channel with a high …
RF performance enhancement in sub-μm scaled β-Ga2O3 tri-gate FinFETs
In this Letter, we report on the enhanced radio frequency (RF) performance in sub-
micrometer scaled β-Ga 2 O 3 tri-gate FinFETs. With a 200-nm-thick β-Ga 2 O 3 bulk channel …
micrometer scaled β-Ga 2 O 3 tri-gate FinFETs. With a 200-nm-thick β-Ga 2 O 3 bulk channel …