Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
Nanoscale transport properties at silicon carbide interfaces
F Roccaforte, F Giannazzo… - Journal of Physics D …, 2010 - iopscience.iop.org
Wide bandgap semiconductors promise devices with performances not achievable using
silicon technology. Among them, silicon carbide (SiC) is considered the top-notch material …
silicon technology. Among them, silicon carbide (SiC) is considered the top-notch material …
Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors
S Dhar, S Haney, L Cheng, SR Ryu… - Journal of Applied …, 2010 - pubs.aip.org
Free electron concentration and carrier mobility measurements on 4H–SiC metal-oxide-
semiconductor inversion layers are reported in this article. The key finding is that in state-of …
semiconductor inversion layers are reported in this article. The key finding is that in state-of …
Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors
A Frazzetto, F Giannazzo, P Fiorenza, V Raineri… - Applied Physics …, 2011 - pubs.aip.org
The mechanism limiting the channel mobility in metal-oxide-semiconductor field-effect
transistors (MOSFETs) fabricated in Al-implanted 4H-SiC is discussed comparing different …
transistors (MOSFETs) fabricated in Al-implanted 4H-SiC is discussed comparing different …
Critical issues for interfaces to p-type SiC and GaN in power devices
Silicon carbide (SiC) and gallium nitride (GaN) are excellent wide band gap materials for
power electronics. In spite of the significant progresses achieved in the last years, there are …
power electronics. In spite of the significant progresses achieved in the last years, there are …
1200-V 5.2- 4H-SiC BJTs With a High Common-Emitter Current Gain
HS Lee, M Domeij, CM Zetterling… - IEEE Electron …, 2007 - ieeexplore.ieee.org
This letter presents fabrication of a power 4H-SiC bipolar junction transistor (BJT) with a high
open-base breakdown voltage BV CEO ap 1200 V, a low specific on-resistance R SP_ON …
open-base breakdown voltage BV CEO ap 1200 V, a low specific on-resistance R SP_ON …
The current status and the future prospects of surface passivation in 4H-SiC transistors
The degraded performance of 4H-SiC transistors due to a high density of the SiC/SiO 2
interface states (D IT)(~ 10 12-10 13 eV-1 cm-2) has gained increasing attention in recent …
interface states (D IT)(~ 10 12-10 13 eV-1 cm-2) has gained increasing attention in recent …
Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface quality and bias temperature instability of 4H-SiC MOS capacitors
C Yang, Z Yin, F Zhang, Y Su, F Qin, D Wang - Applied Surface Science, 2020 - Elsevier
Interface properties and bias temperature instability (BTI) determine the performance and
stability of SiC metal-oxide semiconductor (MOS) devices. In this work, we propose an …
stability of SiC metal-oxide semiconductor (MOS) devices. In this work, we propose an …
Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors
P Fiorenza, F Giannazzo, A Frazzetto… - Journal of Applied …, 2012 - pubs.aip.org
The influence of the surface morphology on the channel mobility of 4H-SiC metal-oxide-
semiconductor field effect transistors annealed under two different conditions is discussed …
semiconductor field effect transistors annealed under two different conditions is discussed …
Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors
Effects of surface recombination on the common emitter current gain have been studied in 4
H-silicon carbide (SiC) bipolar junction transistors (BJTs) with passivation formed by …
H-silicon carbide (SiC) bipolar junction transistors (BJTs) with passivation formed by …