Spintronics is a growing research field that focuses on exploring materials and devices that
take advantage of the electron's “spin” to go beyond charge based devices. The most …

In neuromorphic computing, artificial synapses provide a multi‐weight (MW) conductance
state that is set based on inputs from neurons, analogous to the brain. Herein, artificial …

We present a NAND-like spintronics memory (NAND-SPIN) device for high-density non-
volatile memory applications. Fast erasing and programming of magnetic tunnel junction …

We propose a toggle spin torques magnetic random access memory (TST-MRAM) for
ultrafast computing. The write operation of the TST-MRAM is achieved by applying two …

Spintronics, the use of spin of an electron instead of its charge, has received huge attention
from research communities for different applications including memory, interconnects, logic …

Provided is a magnetic memory including: a first bit line, a second bit line, and a third bit line;
a word line; a first magnetoresistance effect element; a first transistor; a second …

Emerging device-based digital processing-in-memory (PIM) architectures have been
actively studied due to their energy and area efficiency derived from analog to digital …

Time Series Analysis (TSA) is a critical workload to extract valuable information from
collections of sequential data, eg, detecting anomalies in electrocardiograms. Subsequence …

This paper presents area optimization techniques for high-density spin-orbit torque magnetic
random-access memories (SOT-MRAMs). Although SOT-MRAM has many desirable …

In this brief, we present a novel low area joint 2T spin orbit torque magnetic random access
memory (SOT-MRAM) cell architecture. The proposed joint 2T cell achieves up to 15% of …